Nitrogen atoms exist in silicon as non-reactive nitrogen molecules. This is concluded from two I-R absorption experiments: one is the nitrogen isotope effects on N- N pairs and the other is silicon isotope shifts at 10 K. Intrinsic resistivities (over 20 K ohm-cm) are obtained by annealing at 1000°C, 1 min. in N2 in both p- and n-type nitrogen doped thin wafers. Resistivity increases are due to deep- level generations: 0.66 eV above the valence band for p-type and mainly 0.44 eV below the conduction band for n-type material. These deep levels are considered to be formed by nitrogen pairs and divacancies which are incorporated during growth. Since divacancies are easy to out diffuse to the wafers surface, the deep levels are also irreversibly removed. Diffusion coefficient of Si intersititialswici'ch are annihilated with divacancies in the lattice are calculated as 6×10−6cm2/s and 2×10−6cm2/s at 900°C and 1000°C respectively. Migration energy of Si interstitials is about 4.5 eV.

No abstract

Ion bombardment-induced thermal reaction between a fluorocarbon adlayer and a SiO2 surface in a reactive-ion-etching (RIE) environment which was simulated in an ultrahigh-vacuum thermal desorption mass spectroscopy (TDS) apparatus has been studied. The RIE-induced fluorocarbon chemisorbed layer, covering the SiO2 surface, was observed to be thermally stimulated to react chemically with the SiO2 in the TDS apparatus with an activation energy of approximately 1.9 eV. A terminal group, chemisorbed at the adlayer/SiO2 interface, could be an active participant in the thermal reaction. This observation indicates the possibility that chemical sputtering could occur in the actual RIE through a thermal excitation step, induced by ion bombardment. A significant difference in the RIE-induced mixing of fluorine atoms between SiO2 and Si also appeared in their TDS spectra.

No abstract

No abstract