Investigation of iron (II) phthalocyanine based schottky device as gamma radiation sensor

Roy, M.S.; Kumar, Manish; Jaiswal, Pratibha; Sharma, Ganesh D.

doi:10.1016/j.radmeas.2003.11.001

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…It is easy to deposit as thin film layer due to high thermal and chemical stability and the α phase is normally obtained. FePc can be utilized in many applications including NO 2 gas sensing elements [1][2], gamma radiation sensing elements [3] and potentiometric sensor for detection of ascorbic acid. So, their surface interaction [4], optical properties, electrical properties, electronic band structure and magnetic properties have been intensively studies.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopys Studies of Iron Phthalocyanine Thin Films

Chamlek

Pratontep

Kerdcharoen

et al. 2008

AMR

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Iron phthalocyanine (FePc) thin films prepared by thermally evaporated from as received and purified powders were studied. The molecular interaction between FePc thin films and acetone vapor was studies by X-ray photoemission spectroscopy (XPS) and optical absorption spectrometer. The core level XPS spectra and optical absorption spectra showed slightly different between the spectra before and after acetone exposure. For FePc film evaporated with purified powder, only the Fe 2p3/2 spectra at about 712 eV appeared and the height of peak dramatically decreased. Iron K-edge X-ray absorption near edge structure (XANES) spectra was used to investigate iron atom in as received and purified powders and also study the interaction between FePc molecule and methanol vapor. The X-ray diffraction pattern of as received, annealed and purified FePc powder were investigated to study the crystal reformation and Raman spectroscopy was used to investigate iron atom vibration in as received FePc film.

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Section: Introductionmentioning

confidence: 99%

Spectroscopys Studies of Iron Phthalocyanine Thin Films

Chamlek

Pratontep

Kerdcharoen

et al. 2008

AMR

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“…Due to the vertical structure, the conductive channel of FePc-VOBJT is perpendicular to the substrate, and the conductive channel length can be approximated as the thickness of the organic layer. The Schottky barrier at the interface between the P-type semiconductor FePc and Al base forms the depletion layer [12], and FePc forms an ohmic contact with the Cu electrode. The Al film forms a Schottky contact with the FePc film, which has similar rectification characteristics to a PN junction, and the three layers of Al/FePc/Cu in the device can form a diode structure.…”

Section: Methodsmentioning

confidence: 99%

Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode

Feng¹,

Zhu²,

Ge³

et al. 2022

Semicond. Sci. Technol.

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The structure of Cu/FePc/Al/FePc/Cu vertical structure organic bipolar junction triode (VOBJT) is prepared by vacuum vapour deposition and magnetron sputtering process, using the photosensitive organic semiconductor material iron phthalocyanine (FePc) as the organic layer. The experiment results show that the device's output current is unsaturated, and the base voltage can effectively regulate the output current. FePc-VOBJT has good optoelectronic characteristics, and the optical response rate can reach R=0.19 A/W. Under the AC base voltage, the cut-off frequency of FePc-VOBJT is fc=10.7 kHz, and the turn-on and turn-off time can reach the microsecond level. When FePc-VOBJT responds to light pulse, the cut-off frequency fc(Light)=2 kHz, and the switch time can reach the millisecond level. Vertical structure dramatically reduces the device's conductive channel length and junction capacitance, which makes the organic semiconductor materials with poor electrical properties expected to be used in high-speed photoelectric sensors.

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“…3 (a) and (b), the values of ε 0 and ε ″ decrease with the increasing radiation dose especially in the accumulation region and are almost constant under radiation in the inversion region. This change was also attributed to the change in the capacitance and conductance values [12,[27][28][29][30]. Furthermore, the dielectric constant of the capacitor is directly proportional to the number of dipoles.…”

Section: The Effects Of γ-Radiation On the Dielectric Propertiesmentioning

confidence: 99%