Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs

Abstract

This paper investigates the trap position by random telegraph signal (RTS) analysis in moderate inversion in partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. In the diffusion current-dominated region, the electron concentration distribution is more non-uniform along the channel than the one in the drift current-dominated region. In the diffusion region, the application of drain (source) voltage can influence the potential at the drain (source) side only. Accordingly, the position of oxide trap can be further clarified using RTS measurements to compare both the capture times as well as the relative channel current amplitudes of devices with and without interchanged source/drain.

A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs

“…[10][11][12][13] The RTS phenomenon is commonly caused by a carrier that has been captured and emitted by an oxide trap. Although researches on lateral trap position determined by 2-level channel current RTS (2-RTS) have been previously reported, [13][14][15] there are few reports that study the trap position in multilevel RTS. In this work, the located regions of lateral trap position are analyzed by 3-level channel current RTS (3-RTS) with and without interchanged S/D (reverse and forward operations).…”