Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

Cheng, Yuang-Tung; Ho, Jyh-Jier; Lee, William J.; Tsai, Song-Yeu; Lu, Yung-An; Liou, Jia-Jhe; Chang, Shun-Hsyung; Wang, Kang L.

doi:10.1155/2010/268035

Cited by 18 publications

(8 citation statements)

References 22 publications

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“…11,12 For the (100) Si/ SiO 2 interface, the dominant class of interface traps are the P b0 and P b1 -type Si dangling bonds, 17,18 which can be passivated by hydrogen during forming gas anneals, enhancing the performance of silicon devices, including solar cells. 15,16,19 A set of p + Si reference anodes were used as the starting substrates with a 14 nm thick ALD-TiO 2 protection layer and an iridium catalyst surface layer. The performance of the asdeposited anodes is similar to that described in our previous reports of TiO 2 films in this thickness range.…”

Section: Hydrogen Passivationmentioning

confidence: 99%

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

Scheuermann

Lawrence

Meng

et al. 2016

ACS Appl. Mater. Interfaces

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Atomic layer deposited (ALD) TiO2 protection layers may allow for the development of both highly efficient and stable photoanodes for solar fuel synthesis; however, the very different conductivities and photovoltages reported for TiO2-protected silicon anodes prepared using similar ALD conditions indicate that mechanisms that set these key properties are, as yet, poorly understood. In this report, we study hydrogen-containing annealing treatments and find that postcatalyst-deposition anneals at intermediate temperatures reproducibly yield decreased oxide/silicon interface trap densities and high photovoltage. A previously reported insulator thickness-dependent photovoltage loss in metal-insulator-semiconductor Schottky junction photoanodes is suppressed. This occurs simultaneously with TiO2 crystallization and an increase in its dielectric constant. At small insulator thickness, a record for a Schottky junction photoanode of 623 mV photovoltage is achieved, yielding a photocurrent turn-on at 0.92 V vs NHE or -0.303 V with respect to the thermodynamic potential for water oxidation.

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Section: Hydrogen Passivationmentioning

confidence: 99%

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

Scheuermann

Lawrence

Meng

et al. 2016

ACS Appl. Mater. Interfaces

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“…However, the weighted average reflectance (WAR) values achieved by alkaline texturing are significantly lower than those achieved with acidic texturing. Furthermore, if acidic texturing times are used that are longer than optimal, then the textured concavities become larger and flatter and the resulting surface is significantly more reflective [30].…”

Section: Model Of Acidic-textured Surfacesmentioning

confidence: 99%

Modelling of Light Trapping in Acidic-Textured Multicrystalline Silicon Wafers

Zhao

et al. 2012

International Journal of Photoenergy

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Acidic texturing has been widely used to reduce the reflection losses for silicon solar cells fabricated on multicrystalline wafers, however, there are few available models which attempt to predict the reduced reflection after texturing based on the morphology of the textured surfaces. An optical model which simulates the light trapping and scattering effects of acidic-textured surfaces based on the surface morphology is presented. The developed model was experimentally verified by reflection measurements from multicrystalline silicon wafers textured using different etching conditions. The relationship between weighted average reflection and surface morphology is demonstrated with some of the trends being explained by simulating reflection in different wavelength regions. The developed model could be embedded into solar cell simulation tools or adapted to predict optical properties of diverse surface morphologies.

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“…Before any treatment of the mc-Si solar cell upon predeposit P and drive-in diffusion, a 100-nm Si x N y and SiO 2 antireflection coating was deposited on the front at 200 • C by plasma enhanced chemical vapor deposition as described in our previously work [16][17][18][19][20]. When the metallization of both sides was finished, the samples were immediately fired in the belt furnace at 950 • C. This was followed by the FG process.…”

Section: Treatment Results and Discussionmentioning

confidence: 99%

Efficiency Improved byH2Forming Gas Treatment for Si-Based Solar Cell Applications

Cheng¹,

Ho²,

Lee³

et al. 2010

International Journal of Photoenergy

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The photovoltaic (PV) effects have been investigated and improved using efficient treatments both on single-crystalline (sc) and on multicrystalline (mc) silicon (Si) solar cells. The major effect of forming gas (FG) treatment on solar cell performance is the fill-factor values, which increase 3.75% and 8.28%, respectively, on sc-Si and mc-Si solar cells. As for the optimal 15%-H2ratio and 40-minute FG treatment, the conversion efficiency (η) values drastically increase to 14.89% and 14.31%, respectively, for sc- and mc-Si solar cells. Moreover, we can measure the internal quantum efficiency (IQE) values increase withH2-FG treatment under visible wavelength (400~900 nm) radiation. Thus based on the work in this research, we confirm thatH2passivation has become crucial both in PV as well as in microelectronics fields. Moreover, the developed mc-Si solar cell by properH2FG treatment is quite suitable for commercial applications.

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Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

Cited by 18 publications

References 22 publications

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

Modelling of Light Trapping in Acidic-Textured Multicrystalline Silicon Wafers

Efficiency Improved byH2Forming Gas Treatment for Si-Based Solar Cell Applications

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