Investigation of macroscopic uniformity during CH/sub 4//H/sub 2/ reactive ion etching of InP and improvement using a guard ring

Janiak, K.; Niggebrugge, U.

doi:10.1109/iciprm.1996.491947

Cited by 1 publication

(1 citation statement)

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“…Further, the uniformity, irregularity and sidewall smoothness in fabricated structure limit the quality factor. There are many general studies on etching InP of large-scale structures [4][5] . Chen et al 6 and Feurprier 7 studied the etch mechanism of a ICP plasma using CH 4 +H 2 chemistry.…”

Section: Introductionmentioning

confidence: 99%

2D InP photonic crystal fabrication process development

et al. 2006

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We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N 2 +Cl 2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectric column radius of 120 nm. Large efforts have been devoted on developing a proper mask. We obtained a perfect, clean and vertical profiled SiN X mask. The next main effort is InP pattern transfer in Cl 2 +N 2 plasma. Etching selectivity, smooth sidewall and etch profile are directly related to plasma process condition, besides the quality of SiN X mask. We have optimized the N 2 +Cl 2 plasma condition to obtain high aspect ratio, vertical profile and smooth sidewall InP structures. Cylindrical holes (2 micron depth) and rodlike pillars (2.4 micron height) are uniformly fabricated. An aspect ratio of 18 for 100nm trench lines has been obtained. AFM measurement evidences that etched surfaces are smooth. The root mean square roughness of pillar and hole is 0.7 nm and 0.8 nm, respectively. The optical transmission characterization of ridge waveguides has been carried out. Transmission spectrum of 1 micron wide waveguide has been obtained.

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Section: Introductionmentioning

confidence: 99%