Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching

Tran, Duc H.; Fansler, C.; Grotjohn, T.A.; Reinhard, D.K.; Asmussen, J.

doi:10.1016/j.diamond.2010.02.001

Cited by 38 publications

(30 citation statements)

References 16 publications

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“…A 20-nm thermal SiO 2 layer was grown on a p-type wafer as a gate dielectric, and a 20-nm layer of Si 3 N 4 was deposited on the SiO 2 layer by low-pressure chemical vapor deposition, which served as a buffer layer for diamond deposition and an etch stopper for diamond etching as well. It was reported that Si 3 N 4 showed a high etch selectivity of more than five for diamond film etching; thus, it is considered to be a good etch stopper [7]. Subsequently, a nanocrystalline diamond film with a 1.35-μm thickness was deposited as a gate material using hot filament CVD.…”

Section: Device Fabricationmentioning

confidence: 99%

Nanocrystalline Diamond Gate FET for on-State Current Improvement

Kim

Lee

Choi

2010

IEEE Electron Device Lett.

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A nanocrystalline diamond gate field-effect transistor (FET) is demonstrated for the improvement of ON-state current with a CMOS-compatible process. A nanocrystalline diamond film was deposited on a Si 3 N 4 /SiO 2 gate dielectric as a gate material. The diamond thin film served as a gate electrode; hence, an n-channel FET was successfully demonstrated. As a control group, a polysilicon gate FET with the same structure was also fabricated. Compared to the polysilicon gate FET, the diamond gate FET showed doubled ON-state current, which was primarily attributed to the strain effect of the diamond gate acting on the channel.Index Terms-Diamond gate, high-performance field-effect transistor, nanocrystalline diamond, strain effect, stress effect.

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Section: Device Fabricationmentioning

confidence: 99%

Nanocrystalline Diamond Gate FET for on-State Current Improvement

Kim

Lee

Choi

2010

IEEE Electron Device Lett.

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“…The thickness of film 2 is determined by the depth of etching required for the diamond film. If the etching is to be performed in electron cyclotron resonance (ECR) plasma in argon-oxygen (Ar:O 2 , 6:20 sccm) mixture, the mask thickness can be determined using data on the etching rates of mask and diamond, which have been reported by Tran et al [7] and are presented in the table together with data for etching in the presence of elegas (SF 6 ).…”

mentioning

confidence: 99%

“…The subsequent etching of diamond through the mask can be performed, e.g., using ECR in Ar + O 2 + CF 4 plasma [7].…”

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confidence: 99%

Mask for micropattern formation on diamond films

et al. 2012

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A new technology of forming micropatterned masks for the etching of diamond films is proposed, which makes possible high precision lithography on the samples with areas up to 10 4 mm 2 . A minimum ele ment size that can be achieved is only determined by the level of lithography accessible for silicon based inte grated circuits. The proposed technology can be used in creating unique devices, including biosensor chips for human genome decoding.

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“…Recent progress in the use of plasma processing to deliver 15 complex surface geometries has yielded results that suggest the technique is a viable method of enhancing detector response, such use having been reported in the literature on a coarse scale for thinning [1] and surface processing and patterning [2]. To make the best use of this capability it is vital that the relation-…”

Section: Introductionmentioning

confidence: 99%

Development of high temperature, radiation hard detectors based on diamond

Metcalfe

Fern

Hobson

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the 12 C(n,α) 9 Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response.

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Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching

Cited by 38 publications

References 16 publications

Nanocrystalline Diamond Gate FET for on-State Current Improvement

Nanocrystalline Diamond Gate FET for on-State Current Improvement

Mask for micropattern formation on diamond films

Development of high temperature, radiation hard detectors based on diamond

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