Investigation of Mg Doping Profile in the <I>p</I>-Cladding Layer for High-Brightness AlGaInP-Based Light Emitting Diodes

Abstract

We investigated 590 nm light-emitting diodes appropriate for full-color display applications in terms of their electrical and optical behaviors during operation according to their Mg doping profile in the p-cladding layer. As the hole concentration in the "b" zone of the p-cladding layer is increased from 3.4 x 10(17) to 6.7 x 10(17), the light output power increases by 41% due to the enhancement of the hole injection into the active region and also due to the minimization of the carrier overflow problem. However, at an oversaturation of Mg doping with excess [Cp2Mg]/[III] in the "b" zone, the internal quantum efficiency degrades because of the decrease in hole concentration because of the oversaturated material problem.