We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness increases from 0.5 nm to 6.0 nm, indicating a Stranski-Krastanov growth mode. As the ambient temperature is increased to 300 K, the PL spectrum of the B-type dots is annihilated quickly because the large dot size induces a defect-related nonradiative recombination process. In contrast, the PL spectrum of the A-type dots is well maintained to 300 K. These data indicate that the Ga0.33In0.67P material is appropriate for an active layer of 700 nm light emitters.

We investigated 590 nm light-emitting diodes appropriate for full-color display applications in terms of their electrical and optical behaviors during operation according to their Mg doping profile in the p-cladding layer. As the hole concentration in the "b" zone of the p-cladding layer is increased from 3.4 x 10(17) to 6.7 x 10(17), the light output power increases by 41% due to the enhancement of the hole injection into the active region and also due to the minimization of the carrier overflow problem. However, at an oversaturation of Mg doping with excess [Cp2Mg]/[III] in the "b" zone, the internal quantum efficiency degrades because of the decrease in hole concentration because of the oversaturated material problem.