Investigation of MOVPE-grown GaN layers doped with As atoms

Tsatsul’nikov, A. F.; Ber, B. Ya.; Карташова, А. П.; Kudryavtsev, Yu. A.; Ledentsov, N. N.; Lundin, V. V.; Maksimov, M. V.; Sakharov, A. V.; Usikov, A. S.; Alfërov, Zh. I.; Hoffmann, A.

doi:10.1134/1.1187770

Cited by 9 publications

(6 citation statements)

References 8 publications

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“…GL also remains unsaturated up to excitation densities of about 2 kW cm −2 . Also noteworthy is the fact that no GL emission is detected in the PL spectra of the samples grown at low temperatures in the As ambient, using both TBAs and AsH 3 [17], when As incorporation is believed to be significant. The GL emission was not observed, either, when a GaAs layer was deposited on a GaN surface and then annealed and evaporated at high temperatures in a hydrogen atmosphere.…”

Section: Resultsmentioning

confidence: 99%

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Tsatsul’nikov

Krestnikov

Lundin

et al. 2000

Semicond. Sci. Technol.

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Coherent ultrathin GaAsN insertions are formed in a GaN matrix by predeposition of an ultrathin GaAs layer on a GaN surface, followed by annealing in an NH 3 atmosphere and overgrowth with GaN. During the overgrowth, most of the As atoms are substituted by N, with a dense array of coherent GaAsN nanodomains with lateral sizes of about 3-4 nm formed in the GaN matrix. We report a green luminescence due to GaAsN insertions, surviving at high observation temperatures and excitation densities.

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Section: Resultsmentioning

confidence: 99%

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Tsatsul’nikov

Krestnikov

Lundin

et al. 2000

Semicond. Sci. Technol.

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“…The first experimental evidence for the existence of such emission came in photoluminescence (PL) studies of GaN implanted with As, where a peak at 2.58 eV was observed [8]. More recently, such blue/green PL has been observed in samples of GaAs nitrided in NH 3 [9] and in As-doped GaN grown by metal-organic vapourphase epitaxy (MOVPE) [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy

Foxon

Harrison

Новиков

et al. 2002

J. Phys.: Condens. Matter

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We have studied the growth and properties of GaN:As layers prepared by molecular beam epitaxy, using a plasma source for active nitrogen. We have demonstrated that arsenic doping during growth produces films showing blue emission at room temperature. The blue emission is centred at 2.6 eV and is more than a decade stronger than the band edge emission. The films are predominantly wurtzite, but with a small cubic content which exists mainly close to the substrate-epilayer interface. We have investigated the influence of growth conditions on the intensity of this blue emission. In films grown under optimum conditions, the blue emission is strong enough to be clearly visible under normal room lighting. We have also discussed the transition from As-doped GaN showing blue emission to the formation of GaN 1−x As x alloys. We have determined that for a fixed arsenic flux, increasing the N/Ga ratio leads to the formation of alloy films. Our results suggest that this materials system may have potential applications in electronic and opto-electronic devices.

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“…The first experimental evidence for the existence of such emission came in photoluminescence (PL) studies of GaN implanted with As, where a peak at 2.58 eV was observed [5]. More recently, blue-green PL at about 2.6 eV has been seen in samples of GaAs nitrided in NH 3 [9] and in As-doped GaN grown by metal-organic vapour phase epitaxy (MOVPE) [10][11][12]. Arsenic doping has also been reported to improve the PL of GaN grown by MOVPE, suppressing the yellow emission whilst at the same time increasing the intensity of the donor acceptor pair emission at 3.28 eV [13] and improving additionally the electrical properties of GaN [14].…”

Section: Introductionmentioning

confidence: 99%

A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride

Новиков

Winser

Harrison

et al. 2001

Semicond. Sci. Technol.

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We have investigated the influence of the growth conditions on the intensity of blue emission at room temperature from As-doped GaN samples grown by molecular beam epitaxy. A series of As-doped GaN samples was grown at 800 • C with constant fluxes of As and gallium, but with different amounts of active nitrogen. Varying the N flux allowed us to investigate films grown from strongly Ga-rich conditions to more N-rich conditions. The blue emission increases monotonically with the nitrogen flux and is most intense in the layers grown under the most nitrogen-rich conditions. This fact suggests that As atoms incorporated into the Ga sub-lattice are responsible for the strong blue emission in As-doped GaN.

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Investigation of MOVPE-grown GaN layers doped with As atoms

Cited by 9 publications

References 8 publications

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy

A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride

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