Investigation of NBTI degradation on power VDMOS transistors under magnetic field

NBTI stress on power VDMOS transistors under low magnetic field

“…While the magnetic field accelerates the recovery of oxide traps induced by NBTI, which explain the decrease of the normalized I DS /I 0 (at recovery phase) with increasing of magnetic field, see fig.6. Note that the reducing of interface and oxide traps induced by NBTI and acceleration of recovery with applied magnetic field are previously reported in [6,12]. In addition, to the confirmation of previous observation using the CP method, we show that the magnetic field affect only the oxide traps in the recovery phase.…”

“…Note that, the same observation has been reported by Tahi et al [6] using the drain-source current (I DS measurement) on VDMOSFETs (IRF 9530). This issue is confirmed, in this work, using another reference of VDMOSFET which is IRF 9530 N, see fig.6.…”

“…Recently, Tahi et al [6] have reported that both interface ( N it ) and oxide traps ( N ot ) induced by NBTI stress on commercial vertical double diffused transistor (VDMOSFET) decrease by applying magnetic field, and the recovery of NBTI induced threshold voltage shift ( V th ) is accelerated by the applied magnetic field. In this work, these issues are investigated using the charge pumping (CP) method.…”