Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology

Jung, Eun Ji; Jung, Sung Yoon; Kim, Hyun-Su; Yun, Ji-Hoon; Cheong, Seong Hwee; Kim, Byung Hee; Choi, Gil Heyun; Kim, Sung Tae; Chung, U‐In; Moon, Joo Tae; Ryu, Byung Il

doi:10.1016/j.mee.2005.07.041

Cited by 8 publications

(2 citation statements)

References 7 publications

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“…Authors showed that an addition of such metals (Me) as Pt, Pd, Ti, Ta or W to the Ni/Si thin film system results in formation of a monosilicide solution Ni 1-x Me x Si, which increases the monosilicide stability at high temperatures. In contrast, an addition of Co to the Ni-Si system results in formation of a disilicide solid solution Ni 1-x Co x Si 2 and leads to a decrease of the disilicide formation temperature [14][15].…”

Section: Introductionmentioning

confidence: 99%

Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

Mogilatenko

Allenstein

Schubert

et al. 2010

MSF

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Abstract. Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi 2-x Al x and NiSi 2-x Ga x layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi 2-x Al x and NiSi 2-x Ga x layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A-and Btype orientations.

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Section: Introductionmentioning

confidence: 99%

Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

Mogilatenko

Allenstein

Schubert

et al. 2010

MSF

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“…11 Moreover, the Co 1Àx Ni x Si 2 films are morphologically more stable than CoSi 2 and NiSi 2 films under identical conditions including film thickness. 12,13 Increasing Ni fraction x leads to an increase in the lattice parameter of Co 1Àx Ni x Si 2 , i.e., making it closer to the lattice parameter of Si. 14 Specifically, the phase formation is dependent on the initial metal thickness and composition.…”

Section: Introductionmentioning

confidence: 99%

Extensive Raman spectroscopic investigation of ultrathin Co1−xNixSi2 films grown on Si(100)

Piao¹,

Zhu²,

Gao³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ultrathin silicide films were formed by starting from 1–8 nm thick Co1−xNix (x = 0, 0.25, 0.5, 0.75, and 1) at 350 °C–900 °C. For each composition x, there exists a critical thickness above which the transition temperature from monosilicides CoSi and NiSi to a disilicide-like phase increases with increasing film thickness. Below this thickness, the disilicide phase seems to form without exhibiting the monosilicides within the detection resolution limits of transmission electron microscopy and Raman spectroscopy. Raman spectroscopic analysis seems to indicate that Ni could be dissolved in the CoSi lattice to a certain fraction despite the fact that CoSi and NiSi are distinct with different crystallographic structures. Moreover, the disorder-induced Raman scattering in NiSi2 is found to be enhanced by Co incorporation. The observed annealing behaviors are attributed to variations in free energy change for phase transition caused by differences in metal thickness.

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Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

Ohmi

Chen

Masahiro³

2016

Journal of Elec Materi

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Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology

Cited by 8 publications

References 7 publications

Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

Extensive Raman spectroscopic investigation of ultrathin Co1−xNixSi2 films grown on Si(100)

Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

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