Investigation of NiSi and TiSi as CMOS gate materials

Xuan, Peiqi; Bokor, Jeffrey

doi:10.1109/led.2003.817371

Cited by 49 publications

(21 citation statements)

References 11 publications

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“…In particular, the impurity at the interface between the dielectric and the metal gate significantly affects the effective work function due to charge exchange among elements at the interface. [16][17][18] Although, in this particular case, impurities in Ta-Pt alloys do not significantly change the effective work function or V fb , verifying the impurity profile is still an aid to understanding impurity diffusion and distribution in alloys. The impurity in the alloy was analyzed by secondary ion mass spectroscopy (SIMS).…”

Section: Effects Of Impurity Incorporation On Work Functionmentioning

confidence: 88%

“…The impurities incorporated by the implantation have also been used for effective work function adjustment. [16][17][18] In particular, the impurities that accumulate at the interface between metal and gate dielectrics can significantly change the effective work function. [16][17][18] In this work, we examine the thermal stability of Ta-Pt alloys with high Ta concentration.…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18] In particular, the impurities that accumulate at the interface between metal and gate dielectrics can significantly change the effective work function. [16][17][18] In this work, we examine the thermal stability of Ta-Pt alloys with high Ta concentration. In addition, the electrical effect of incorporating group III or V element impurities on the work function is also studied.…”

Section: Introductionmentioning

confidence: 99%

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Ta–Pt Alloys as Gate Materials for Metal–Oxide–Semiconductor Field Effect Transistor Application

Huang

Tsui

2009

jjap

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Section: Effects Of Impurity Incorporation On Work Functionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ta–Pt Alloys as Gate Materials for Metal–Oxide–Semiconductor Field Effect Transistor Application

Huang

Tsui

2009

jjap

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“…The Ti-Ni-Si system contains a high number of phases with interesting properties. Ti-and Nisilicides are of interest as contacts and gate electrodes in transistors [1,2,3,4,5,6] due to their low electrical resistivity (e.g. 24, 14 and 34 μΩm for Ni 2 Si, NiSi and NiSi 2 , respectively [3]) and integratibility into CMOS processing.…”

Section: Introductionmentioning

confidence: 99%

Structural and Functional Properties of the Thin Film System Ti–Ni–Si

et al. 2019

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The thin-film system Ti-Ni-Si was investigated using combinatorial materials science methods. A thin-film composition spread library of the system was fabricated using combinatorial magnetron sputtering. The functional properties Seebeck coefficient, electrical resistivity and luminance were determined using high-throughput characterization techniques. A thin-film phase diagram was established by the assessment of high-throughput X-ray diffraction results. Correlations between composition, phase constitution and functional properties with focus on the binary composition space are discussed.

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“…1,2) Among the various metal silicides used for advanced Si-based nanodevices, Ni-silicide is perhaps one of the most promising contact materials due to its low resistivity, low formation temperature as well as compatibility with the self-aligned silicidation process. 3,4) The metal silicide contacts are usually formed in selected, laterally confined areas on Si-based substrates.…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates

Cheng

Wang

Chen

2009

jjap

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We report here the first study on the formation of two-dimensional (2D) periodic arrays of nickel metal and Ni-silicide nanodots on Si(111) substrates by the colloidal nanosphere lithography (NSL) and thermal annealing techniques. For the Ni metal nanodot array on Si(111) sample after annealing, NiSi 2 appears to form as the first silicide phase at a temperature as low as 250 C. From transmission electron microscopy (TEM) and electron diffraction analyses, the NiSi 2 nanodots were found to grow epitaxially on the Si (111) surface with the crystallographic relationships NiSi 2 [111] k Si[111] and NiSi 2 ð22 20Þ k Sið2 2 20Þ. In the higher temperatures annealed samples, many of the epitaxial NiSi 2 nanodots were observed to have truncated shapes, and the formation of the faceted structures became more pronounced as the annealing temperature increased. The observed results demonstrate that using the colloidal NSL and heat treatment approaches, it is expected that the investigations of the interfacial reactions of various metal nanodot arrays on Si-based substrates can be achieved.

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Investigation of NiSi and TiSi as CMOS gate materials

Cited by 49 publications

References 11 publications

Ta–Pt Alloys as Gate Materials for Metal–Oxide–Semiconductor Field Effect Transistor Application

Ta–Pt Alloys as Gate Materials for Metal–Oxide–Semiconductor Field Effect Transistor Application

Structural and Functional Properties of the Thin Film System Ti–Ni–Si

Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates

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