Investigation of novel inspection capability for 3D NAND device wordline inspection

With the evolution of semiconducting industries, thermomechanical failure induced in a multilayered structure with a high aspect ratio during manufacturing and operation has become one of the critical reliability issues. In this work, the effect of thermomechanical stress on the failure of multilayered thin films on Si substrates was studied using analytical calculations and various thermomechanical tests. The residual stress induced during material processing was calculated based on plate bending theory. The calculations enabled the prediction of the weakest region of failure in the thin films. To verify our prediction, additional thermomechanical stress was applied to induce cracking and interfacial delamination by various tests. We assumed that, when accumulated thermomechanical-residual and externally applied mechanical stress becomes larger than a critical value the thin-film cracking or interfacial delamination will occur. The test results agreed well with the prediction based on the analytical calculation in that the film with maximum tensile residual stress is the most vulnerable to failure. These results will provide useful analytical and experimental prediction tools for the failure of multilayered thin films in the device design stage.

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Combined VIS-IR spectrometer with vertical probe beam

Protopopov¹

2017

Review of Scientific Instruments

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A prototype of a combined visible-infrared spectrometer with a vertical probe beam is designed and tested. The combined spectral range is 0.4-20 μ with spatial resolution 1 mm. Basic features include the ability to measure both visibly transparent and opaque substances, as well as buried structures, such as in semiconductor industry; horizontal orientation of a sample, including semiconductor wafers; and reflection mode of operation, delivering twice the sensitivity compared to the transmission mode.

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Investigation of novel inspection capability for 3D NAND device wordline inspection

Cited by 4 publications

References 4 publications

In-Situ Monitoring of Multiple Oxide/Nitride Dielectric Stack PECVD Deposition Process

In-Situ Monitoring of Multiple Oxide/Nitride Dielectric Stack PECVD Deposition Process

Interfacial Delamination at Multilayer Thin Films in Semiconductor Devices

Combined VIS-IR spectrometer with vertical probe beam

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