Investigation of optical feedback in high-speed electroabsorption modulated lasers with a window region

Park, Byeong Hoon; Kim, In; Kang, Bada; Bae, Yu-Dong; Lee, Sang Moon; Kim, Young Hyun; Jang, Dong-Hoon; Kim, Tae Il

doi:10.1109/lpt.2005.843954

Cited by 16 publications

(5 citation statements)

References 6 publications

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“…Parallel facet is conventionally adopted as it can be made easily by the mechanical cleaving process. When an angle other than 0 • is needed between waveguide and facet, a curved part is usually inserted along the waveguide to meet the facet with the tilt angle [9]. Devices with such structures have disadvantages of long device length and large radiation loss along the curved part.…”

Section: Fabrication and Measurementmentioning

confidence: 99%

“…However, the significant magnitude of resonance even with AR coating shows that just depositing the AR coating layers does not suffice for avoiding the occurrence of the resonance unless the AR coating is so perfect that the resultant reflectivity is less than 0.01%. An InP window is usually adopted to further remove the optical feedback at the facet and was proven to be efficient for that purpose [9]. But the InP window structure requires the butt coupling process, which raises the production cost and increases the process difficulty especially in reverse mesa structures by selective wet etching.…”

Section: Device Characteristicsmentioning

confidence: 99%

“…Isolation of the modulated optical signal from the DFB laser is one of the key parameters in EML compared to the combination of the discrete DFB laser and external modulator where the optical isolator can remove the back-reflection effect. To suppress the optical feedback in EML, in addition to anti-reflection (AR) coating, InP window and/or tilted waveguide is widely used [9]. In this study, tilted facet was adopted at the end of straight waveguide through the dry etching process.…”

Section: Introductionmentioning

confidence: 99%

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40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

Choe¹,

Kwon²,

Sim³

et al. 2007

Semicond. Sci. Technol.

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We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through the selective-area growth method. The facet reflection was not sufficiently removed by just depositing the anti-reflection coating so that low frequency resonance occurred by optical feedback from the facet to the DFB laser. A tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased significantly.

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Section: Fabrication and Measurementmentioning

confidence: 99%

Section: Device Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

Choe¹,

Kwon²,

Sim³

et al. 2007

Semicond. Sci. Technol.

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show abstract

“…In a photonic integrated device, electrodes are isolated between different sections. However, optical isolation between individual devices is difficult, which leads to the optical coupling or feedback between different sections or devices [2][3][4]. These devices are no longer independent.…”

Section: Introductionmentioning

confidence: 99%

Study of Optical-feedback Using an Integrated Laser-modulator/amplifier Device

Jin

Hsu

Chuang

2006

Integrated Photonics Research and Applications/Nanophotonics

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“…But for higher tolerance to coating quality and thereby higher industrial yield, the waveguide can be modified as well to avoid the small amount of reflected light to couple back into the waveguide. A first approach is to use a window section [8], that is a section without waveguiding as illustrated Fig. 5a.…”

mentioning

confidence: 99%

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Dai¹,

Debrégeas²,

Rold³

et al. 2021

IEEE J. Select. Topics Quantum Electron.

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This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorusbased multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O-and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

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Investigation of optical feedback in high-speed electroabsorption modulated lasers with a window region

Cited by 16 publications

References 6 publications

40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

40 Gbps electroabsorption modulated DFB laser with tilted facet formed by dry etching

Study of Optical-feedback Using an Integrated Laser-modulator/amplifier Device

Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

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