Investigation of p-n junctions in n-Si obtained by electromigration of Al through a thin SiO2 film

Brillouin scattering study of epitaxial InSe films grown on the surface

“…Anyway, we notice that, even though the film constants are, as a whole, lower than those of the bulk material, our results compare reasonably with the incomplete set of constants of reference [20]. On the other hand, remarkable differences are observed with respect to the constants given in reference [19]. In particular, the value of c 13 quoted in reference [19] exceeds that determined by us far beyond the experimental error, yielding a ratio c 12 /c 13 = 1.1.…”

“…On the other hand, remarkable differences are observed with respect to the constants given in reference [19]. In particular, the value of c 13 quoted in reference [19] exceeds that determined by us far beyond the experimental error, yielding a ratio c 12 /c 13 = 1.1. This ratio, which is related to the elastic anisotropy, is instead ≈2.3 for our InSe film, a value rather close to that obtained for other lamellar compounds, such as GaS (≈2.8) and GaSe (≈2.4) [20].…”

“…The resulting values of the elastic constants are shown in the first row of table 1; the uncertainty reported for each constant takes into account both the experimental error and the statistical error related to the fitting procedure. For the sake of comparison, we have reported in the same table the constants of bulk InSe previously measured by two different groups, using ultrasonic techniques [19,20]. We first notice that significant discrepancies appear between these two sets of bulk constants, especially in the values of c 11 and c 12 , whose origin could not be explained in the original papers.…”