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The lifetime t , of minority carriers in p-Si is studied over a wide range of temperatures (17 to 245 "C) and injection levels (0.05 to 6). It is found that at a temperature of T rn w 160 OC and within the injection level range A = 0.05 to 2.5, t , = 35 p; below this temperature, t, increases from 1 to 2 0 p , and above it, decreases from 160 to 5 5 p with increasing directly flowing current through the p n junction.

1 the injection-induced impuriQ photoconductivity (IIIP)in specially undoped InSe single crystals was explained on the basis of the existence of uncontrollable impurity centres, i. e. trapping levels in the forbidden gap of this material and their non-uniform distribution along the specimen. In order to refine the details of this model, the present report deals with an investigation of the effect of doping on the llIP in the above semiconductor. Specilnens with thicknesses from 3 0 to 200 pm were obtained by spallation from large 1nSe:Gd single crystals with NGd = 0.10, 0.20, 0.30, and 0.40 a%, grown by the Bridg -38, 29 (1982).