Investigation of the reactive properties of diffused Si p-n junctions in the region of high injection levels and strong electric fields

Abdullayev, G.B.; Jafarova, E. A.; Iskender‐Zade, Z. A.; Chelnokov, V. E.; Alikhanova, Sh.; Badalov, A. Z.; Akhundov, M.R.

doi:10.1016/0038-1101(68)90084-1

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…4, dots, left vertical scale), the obtained γ G is practically constant above Debye temperature (96 K). The value of γ G , as well as its temperature behaviour, is very similar to that observed for binary layered InSe [22]. For the reasons explained in the previous subsection, the situation with γ G of TlSe (Fig.…”

Section: Grueneisen Parameterssupporting

confidence: 80%

Debye temperatures and Grueneisen parameters of chain TlSe and TlInSe₂

Mamedov

Wakita

Оруджев

et al. 2009

Phys. Status Solidi (c)

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Debye temperatures and Grueneisen parameters of chain TlSe and TlInSe2 were calculated using our earlier obtained ab‐initio results on phonon band structure and existed experimental data on thermal expansion coefficient. For both compounds, the values of heat capacity at constant volume (Cv) were found to obey cubic law at temperatures less than 2 K. The Debye temperatures were determined to be 95 K and 96 K for TlSe and TInSe2, respectively. The unit cells of TlSe and TInSe2 were relaxed by minimizing Hellman‐Feynman forces and the total energy dependence on the unit cell volume was obtained. The bulk modulus (B0) values in Murnaghan and Birch‐Murnaghan equations of state were shown to be very close to each other. By using above B0 and Cv, as well as available experimental data on linear expansion, the heat capacity at constant pressure (CP) was evaluated. Comparison with experimental CP in a wide temperature range showed a good agreement for TlInSe2 and a noticeable discrepancy for TlSe at temperatures above 170 K. The calculated Grueneisen parameter of TlInSe2 showed a tendency to saturation in a region above Debye temperature. The situation with TlSe is not clear because of the ambiguous character of the available experimental data on thermal expansion. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Grueneisen Parameterssupporting

confidence: 80%

Debye temperatures and Grueneisen parameters of chain TlSe and TlInSe₂

Mamedov

Wakita

Оруджев

et al. 2009

Phys. Status Solidi (c)

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“…Furthermore, the method is only capable of measuring rising waveforms. Faris [3] invented a sampler, based on a pulser circuit, to measure arbitrary waveforms. To an arbitrary waveform, a sharp pulse and a dc bias are added to reach the threshold of a monitor gate.…”

Section: Introductionmentioning

confidence: 99%

Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

Swarup

Jain

1982

IEEE Electron Device Lett.

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Many methods have been developed for the measurement of the diffusion length and lifetime of minority carriers in p-n junction solar cells. This paper presents a new technique for the measurement of these parameters, based on capacitance measurements in forwardbias condition at room and liquid air temperatures. In this experiment the solar cell was not biased by an external dc source, but was forward-biased by its own photovoltage generated by illumination. The results give 135 um diffusion length and 5.2 psec lifetime of the minority carriers in a n+-p Si-solar cell.

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The capacitance of abrupt p-n junction diodes under forward bias

Green

Gunn

1973

Phys. Stat. Sol. (a)

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Investigation of the reactive properties of diffused Si p-n junctions in the region of high injection levels and strong electric fields

Cited by 4 publications

References 2 publications

Debye temperatures and Grueneisen parameters of chain TlSe and TlInSe₂

Debye temperatures and Grueneisen parameters of chain TlSe and TlInSe₂

Determination of lifetime and diffusion length in silicon solar cells by self-biased (photovoltage) capacitance measurements

The capacitance of abrupt p-n junction diodes under forward bias

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