Investigation of parameters of new MAPD-3NM silicon photomultipliers

Abstract

In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

Gamma ray detection performance of newly developed MAPD-3NM-II photosensor with LaBr3(Ce) crystal

“…The breakdown voltage (U br ) was 51.6 V and the full working voltage range of the MAPD-3NM-II array was 54 V -56 V. The total capacitance of the array was ∼ 2.5 nF. Compared to the previous MAPD-3NM-I element, the parameters of the new MAPD-3NM-II was improved due to optimization of structure: the operating voltage decreased by 24 %, the dark current decreased more than 2 times at the same gain, the capacitance decreased by 23 %, the gain increased 2 times, and the PDE increased more than 30 % 23 .…”

“…MAPD-3NM-II with buried pixel structure manufactured together with Zecotek Company in 2020 (Fig. 1 right) 23,29 . The array is made up of sixteen 3.7 × 3.7 mm 2 MAPD elements and each element consists of 61000 pixels.…”

“…MAPD-3NM-II demonstrated ∼ 22 % better energy resolution compared to the MAPD-3NM-I 21 . This advantage was related to the high PDE (33 %) of the MAPD-3NM-II 23 .…”

“…Therefore, scintillation detectors based on new photosensors are quite promising candidates that meet the requirements much better, and focusing on their further development is in high demand [9][10][11][12][13][14][15][16][17][18][19][20][21][22] . Many research teams focus on the development of scintillation detectors based on micro pixel avalanche photodiodes (MAPD) or silicon avalanche photomultipliers (SiPM) [15][16][17][18][19][20][21][22][23][24][25][26] . The parameters of latest SiPM generations allows them to become applicable as effective sensor element replacements of PMT in scintillation detectors.…”

“…The parameters of latest SiPM generations allows them to become applicable as effective sensor element replacements of PMT in scintillation detectors. There are many works demonstrating the gamma-ray detection performance of scintillation detectors based on SiPM [23][24][25][26][27] . The main requirements for SiPM in this application are high pixel density and photon detection efficiency (PDE) which play a key role in the linearity and energy resolution of the entire detector 17,21,[23][24][25][26] .…”