Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC

Lu, Bin; Menard, Samuel; Morillon, B.; Alquier, Daniel; Gautier, Gaël

doi:10.1109/ted.2017.2786143

Cited by 3 publications

(3 citation statements)

References 18 publications

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“…The relevance of PSi implementation was validated for low-pass filters (9). The same masking layer was also successfully used during the etching of PSi TRIAC peripheries (see last part) (7). In spite of an efficient PSi localization, the lossy bulk silicon wafer under the PSi layer is known to degrade the device performances in the case of RF passive elements.…”

Section: New Challenges In Rf Devices Integrating Psimentioning

confidence: 99%

“…The remaining issue is to find a way to further increase blocking voltages. For this purpose, an improved edge structure with PS layers on both sides of the p-well is currently under investigation (7).…”

Section: Psi For Ac Power Switches (Triac) Peripheriesmentioning

confidence: 99%

“…In particular, we will describe the way PSi could be used as insulating material in RF devices or power AC Switches. Indeed, many architectures involving PSi peripheries can lead to subsequent performance and reliability improvements of the latter (5,6,7).…”

Section: Introductionmentioning

confidence: 99%

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(Invited) Recent Advances in Porous Silicon Based Microelectronic Devices

Gautier¹,

Billoue²,

Defforge³

et al. 2018

ECS Trans.

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In this paper, we show some recent advances that have been performed in the field of Porous Silicon (PSi) applied to microelectronic devices. Indeed, many components can implement the specific properties of this nanostructured material. Therefore, it has been identified as a serious candidate for the integration of complex functions in a single silicon wafer in a "more than Moore" context. In particular, it will be shown that PSi etching is nowadays mastered at a wafer scale on localized areas, 3D surfaces or on the backside of devices. Some typical examples of applications such as RF devices, AC power switches or ultrasonic transducers will be described in order to illustrate the benefits PSi technology can provide.

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Section: New Challenges In Rf Devices Integrating Psimentioning

confidence: 99%

Section: Psi For Ac Power Switches (Triac) Peripheriesmentioning

confidence: 99%