Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors

Liu, Min; Zhang, Yuming; Lv, Hongliang; Zhang, Yimen; Zhang, Jincan; Ren, Xiaotang

doi:10.1016/j.sse.2015.03.008

Cited by 16 publications

(6 citation statements)

References 15 publications

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“…Especially in the lower bias, the change of current is more obvious. Similar behavior was reported in [4], which investigated the base-emitter (BE) junction of InP/InGaAs HBTs under the same irradiation condition. The ideality factors ( η ) could be extracted from the slope of ln( J F )~ V curves in Figure 6, which was 1.4 for non-irradiated samples and became 2 after 3 MeV proton irradiation at 5 × 10 12 p/cm 2 fluence.…”

Section: Resultssupporting

confidence: 82%

“…Many works have studied the electrical characteristics of InP/InGaAs devices before and after irradiation. In [4], the authors showed that the degradation of current gain and cut-off frequency were caused by proton irradiation in InP HBTs. The increase in offset voltage was induced by neutron irradiation in InP single heterojunction bipolar transistors (SHBTs) [5].…”

Section: Introductionmentioning

confidence: 99%

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The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Zhao

et al. 2019

Nanomaterials

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The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation for non-irradiated and 3 MeV proton-irradiated samples at a fluence of 5 × 1012 p/cm2. Compared with non-irradiated samples, a new electron trap at EC-0.37 eV was measured by DLTS in post-irradiated samples and was found to be closer to the center of the forbidden band. The trap concentration in bulk, the interface trap charge density and the electron capture cross-section were 4 × 1015 cm−3, 1.8 × 1012 cm−2, and 9.61 × 10−15 cm2, respectively. The deep level trap, acting as a recombination center, resulted in a large recombination current at a lower forward bias and made the forward current increase in InP/InGaAs heterostructures for post-irradiated samples. When the deep level trap parameters were added into the technology computer-aided design (TCAD) simulation tool, the simulation results matched the current–voltage measurements data well, which verifies the validity of the damage mechanism of proton irradiation.

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Section: Resultssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Zhao

et al. 2019

Nanomaterials

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“…Among Al, As, Ga, and In vacancies induced by proton radiation, the As vacancy will become acceptor-like defects, while Ga and In vacancies will conduct as donor-like defects. [29] To estimate their impacts on InP-based HEMTs, the output channel current I DS with gate-source voltage V GS of 0 V and transfer characteristics with drain-source voltage V DS of 1.5 V are investigated before and after proton irradiation at fluence of 1×10 12 cm −2 , as shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Effect of defects properties on InP-based high electron mobility transistors*

Sun

Chang

et al. 2019

Chinese Phys. B

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The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

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“…The induced vacancies may influence device performances by acting as acceptor or donor defects, including As acceptor defects, In and Ga donor defects. [17] The acceptor-like defects of As vacancies behave as compensation centers of majority carriers, and thus result in performance degradation of InP-based HEMT. The induced As vacancy concentrations after proton irradiation are obtained from SRIM software at incident angles ranging from 0 • to 89.9 • , and the incident proton energy and fluence are set to be 100 keV and 2×10 12 cm −2 in simulations.…”

Section: Irradiation Damage To Inp-based Hemt At Proton Incident Anglesmentioning

confidence: 99%

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

et al. 2018

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InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications. The proton irradiation effects on InAlAs/InGaAs hetero-junction structures of InP-based HEMTs are studied at incident angles ranging from 0 to 89.9 • by SRIM software. With the increase of proton incident angle, the change trend of induced vacancy defects in the InAlAs/InGaAs hetero-junction region is consistent with the vacancy energy loss trend of incident protons. Namely, they both have shown an initial increase, followed by a decrease after incident angle has reached 30 • . Besides, the average range and ultimate stopping positions of incident protons shift gradually from buffer layer to hetero-junction region, and then go up to gate metal. Finally, the electrical characteristics of InP-based HEMTs are investigated after proton irradiation at different incident angles by Sentaurus-TCAD. The induced vacancy defects are considered self-consistently through solving Poisson's and current continuity equations. Consequently, the extrinsic transconductance, pinch-off voltage and channel current demonstrate the most serious degradation at the incident angle of 30 • , which can be accounted for the most severe carrier sheet density reduction under this condition.

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Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors

Cited by 16 publications

References 15 publications

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Effect of defects properties on InP-based high electron mobility transistors*

Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

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