Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation

Akgül, Fatime Duygu; Eymür, Serkan; Akın, Ümmühan; Yüksel, Ömer Faruk; Karadeniz, H.; Tuğluoğlu, Nihat

doi:10.1007/s10854-021-06138-4

Cited by 15 publications

(4 citation statements)

References 39 publications

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“…Thermionic emission model is generally used to describe the carrier transport of SDs. According to the thermionic emission model, the reverse-bias current is expressed as [44,45]:…”

Section: Resultsmentioning

confidence: 99%

“…At low bias-voltage for V ⩽ 0.64 V, the ohmic is predominate, where the electrons inject from NAN to ZnO and trapped by the defect states of ZnO, shown in figure 10 by symbol 1. As the bias-voltage exceeding 0.64 V, the carrier transport is Poole-Frankel emission, where the trapped electrons acquire enough energy and emit from trap to conduction band, shown in figure 10 by symbol 2 [44,55].…”

Section: Resultsmentioning

confidence: 99%

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Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Hwang,

Liou,

Chiou

2024

Nanotechnology

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Dielectric/metal/dielectric (DMD) multilayers as a transparent conducting electrode (TCE) have been developed to replace metals due to their high transparency and low sheet resistance. Nickel oxide (NiO) film with a high work function was used as a dielectric to form NiO/Ag/NiO (NAN) TCE, therefore a high barrier height between NAN/zinc oxide (ZnO) interface. In the study, NAN TCE was deposited on ZnO surface to fabricate metal-semiconductor-metal (MSM) photodetectors (PDs) and study its carrier transport mechanism. The NAN TCE has a low sheet resistance of 6.5 Ω/sq. and transmittance more than 40% in a 300−100 nm wavelength range. Such issues result in the figure-of-merit is higher (2.3 × 10-4 Ω-1) than that (2.5 × 10–7 Ω-1) of pure single NiO thin film. As compared to the conventional Au/ZnO MSM-PDs, the NAN/ZnO MSM-PDs demonstrates a lower leakage current as a result of Ni atoms diffusing into ZnO and passivating the defects. Due to the high work function of NiO, the NAN/ZnO interface exhibits a barrier height as high as 0.91 eV. The Au/ZnO MSM-PDs reveals only one carrier conduction of ohmic due to the electrons tunnel form Au into ZnO through the surface defects. In contrast, two distinct carrier transport mechanisms were observed in the NAN/ZnO MSM-PDs. At low-voltage for, ohmic conduction dominates and the electrons inject from NAN to ZnO, trapped by the defect states of ZnO. At high-voltage for, the trapped electrons acquire enough energy and emit from trap to conduction band, entering Poole-Frankel emission transport.

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“…Thermionic emission model is generally used to describe the carrier transport of SDs. According to the thermionic emission model, the reverse-bias current is expressed as [44,45]:…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Hwang,

Liou,

Chiou

2024

Nanotechnology

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“…Due to their technological advantages in optoelectronic applications, the electrical properties of metal-semiconductor (MS) and metal-interface layer-semiconductor (MIS) type Schottky barrier diodes (SBDs) have been extensively investigated for a long time [1][2][3]. The nonideal behavior observed in electrical features of SBDs has been generally attributed to the effect of interface layer properties [4,5].…”

Section: Introduction (Gi̇ri̇ş)mentioning

confidence: 99%

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Taşcı

2023

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.

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“…Significant changes are observed in the electrical properties of these devices, which are exposed to high levels of radiation. Therefore, it is necessary to investigate the causes of damages in such devices and the effects caused by these damages [27][28][29][30][31][32]. Tataroğlu and Altındal stated that there was a decrease in the device series resistance due to the effect of gamma radiation in their study [30].…”

Section: Introductionmentioning

confidence: 99%

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

Seven¹,

Orhan²,

Ocak³

2021

Phys. Scr.

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The present work intends to discover the influences of 60Co gamma (γ) ray-irradiation on frequency-dependent dielectric features of Graphene/Silicon Schottky diode with an insulator layer. Graphene (Gr) nanosheets have been synthesized by chemical vapor deposition (CVD) to build a Gr-based p-type Si Schottky diode. The diode was irradiated at 30 kGy and 60 kGy doses. The study has been performed at 300 K in the voltage range −6 V to +6 V at dark conditions both at 400 kHz low-frequency and 900 kHz high-frequency. The experimental results showed that dielectric features of the structure are dependent on the radiation dose and applied voltage and to be a strong function of frequency.

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Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation

Cited by 15 publications

References 39 publications

Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation

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