Investigation of SiC trench MOSFET with floating islands

Song, Qi; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yuming; Zhang, Yimen

doi:10.1049/iet-pel.2015.0600

Cited by 16 publications

(5 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is more difficult in the trench device. Many different trench structures exist to protect the trench gate's bottom [77][78][79][80][81][82]. Another key motivator for SiC MOSFET innovation, in addition to enhancing electrical performance, is reliability.…”

Section: Sic Mosfetmentioning

confidence: 99%

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

View full text Add to dashboard Cite

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

show abstract

Section: Sic Mosfetmentioning

confidence: 99%

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…If the electric field is larger than the critical value, the MOSFET will break down. Therefore, the structure and parameters need to be well designed [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ]. Figure 1 b shows a schematic diagram of a MOSFET with three floating P-type structures.…”

Section: Structures Of Mosfetsmentioning

confidence: 99%

“…The simulation results show that the breakdown voltage of the MOSFET increases as the floating P-type structure becomes deeper in the epitaxial layer. By changing the depth of the floating P-type structure, the electric field extension is enhanced so that the breakdown voltage increases [ 20 , 21 , 22 ], as shown in Figure 2 . However, when the depth of the floating P-type structure exceeds 8 μm, as seen from the vertical electric field distribution, the electric field along the PN region shown in Figure 3 a and MOS region shown in Figure 3 b becomes uneven, leading to the slightly increasing breakdown voltage; this is because the distance between the structure and the P-well is too long.…”

Section: Influence Of Structure and Dopingmentioning

confidence: 99%

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

et al. 2021

View full text Add to dashboard Cite

This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET.

show abstract

“…Among various SiC-based devices, as shown in Figure 1a, a 4H-SiC UMOSFET was preferred to provide a better tradeoff between breakdown voltage and on-resistance (R on ) than a planar VDMOSFET [6][7][8][9]. However, a UMOSFET has the disadvantage of a strong electric field in the bottom region of the gate, causing premature breakdown and oxide reliability problems.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance

Kim

2020

Energies

View full text Add to dashboard Cite

In this study, a novel 4H-SiC double-trench metal-oxide semiconductor field-effect transistor (MOSFET) with a side wall heterojunction diode is proposed and investigated by conducting numerical technology computer-aided design simulations. The junction between P+ polysilicon and the N-drift layer forming a heterojunction diode on the side wall of the source trench region suppresses the operation of the PiN body diode during the reverse conduction state. Therefore, the injected minority carriers are completely suppressed, reducing the reverse recovery current by 73%, compared to the PiN body diodes. The switching characteristics of the proposed MOSFET using the heterojunction diode as a freewheeling diode was compared to the power module with a conventional MOSFET and an external diode as a freewheeling diode. It is shown that the switching performance of the proposed structure exhibits equivalent characteristics compared to the power module, enabling the elimination of an external freewheeling diode in the power system.

show abstract

Investigation of SiC trench MOSFET with floating islands

Cited by 16 publications

References 19 publications

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance

Contact Info

Product

Resources

About