Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

Abstract

The InSe thin film was successfully grown on a glass/GaSe substrate using the modified chemical bath deposition (M-CBD) method and a group was annealed one hour at 80 °C in atmospheric conditions. The energy band gap ( ) values of the as-deposited and annealed films were defined 1,89 eV and 1,15 eV, respectively. The transmitance values (%) of the as-deposited and annealed films were asigned %0.65, %4.46 and %11,02, %10,35 at 400 and 700 nm, respectively. The I-V characteristics of the device at different temperatures was examined, the resistivity decreased and the conductivity increased with the increasing temperature. The activation energy in low temperature region was defined 0,05 eV, while it was defined 0.6 eV in high temperature region.

SYNTHESIS AND INVESTIGATION OF STRUCTURAL, SURFACE MORPHOLOGICAL AND OPTICAL PROPERTIES OF InSe/PMItz HYBRID HETEROJUNCTION

“…Energy band gap is determined by utilizing optical absorption spectroscopy technique. The relation between absorption coefficient and energy band gap (Eg) is as follow [25,26]:…”