Investigation of Sputtering Damage around pn Interfaces of Cu(In,Ga)Se2 Solar Cells by Impedance Spectroscopy

Effects of Ammonia‐Induced Surface Modification of Cu(In,Ga)Se2 on High‐Efficiency Zn(O,S)‐Based Cu(In,Ga)Se2 Solar Cells

“…The fitting values of all the circuit parameters are summarized in Table S1, Supporting Information. As shown by the results in Table S1, Supporting Information, and partly by the magnified Nyquist plots in Figure d, the R s shows the smallest value of 4.2 Ω, the R n and R j show the largest values of respectively 896 and 1524 Ω for the solar cell with CIGS film treated by 1 M NH 3 solution, implying a large recombination resistance existed in n‐n and p‐n interface . As the concentration of NH 3 solution increases from 1 to 14 M, the corresponding solar cells have their R s increased from 4.2 to 8.2 Ω, R n and R j decreased from 896 to 395 Ω and from 1524 to 797 Ω, respectively.…”

Experimental determination of band offsets of NiO-based thin film heterojunctions

“…However, a high V oc is expected because NiO is one of the wide E g semiconductors and the V oc was obtained under 1 V. These results suggest that defects were formed around the ZnO/NiO interface because of damage due to sputtering. 28 In addition, large DE c causes leakage current around the pn-junction. Reducing the large band offset is important for improving the performance of NiO-based visible light-transparent solar cells.…”

Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

“…e l s e v i e r . c o m / l o c a t e / t s f reduced by using an α-ZTO layer rather than a polycrystalline ZnO layer [20]. Investigation of the valence-band discontinuity (ΔE v ) and the conduction-band discontinuity (ΔE c ) is important for the design and development of devices as these band offsets determine the junction transport and interface properties of pn-junctions.…”