Investigation of Statistical Broadening in InGaN Alloys

Arteev, D. S.; Sakharov, A. V.; Заварин, Е. Е.; Lundin, W. V.; Смирнов, А. Н.; Davydov, V. Yu.; Yagovkina, M. A.; Usov, S. O.; Tsatsulnikov, A. F.

doi:10.1088/1742-6596/1135/1/012050

Cited by 14 publications

(4 citation statements)

References 5 publications

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“…where 𝛼 𝑈 and 𝐸 𝑈 are empirical constants that depend on the material and the fabrication process 29 . Thermal absorption also leads to some absorption beyond the cut-off wavelength.…”

Section: Quantum Efficiency and Responsivity Of Photodiodementioning

confidence: 99%

Spectral compensation of extended InGaAs photodetector thermal drift in miniaturized FTIR spectral sensors

Abozyd,

Mortada,

Saied

et al. 2024

MOEMS and Miniaturized Systems XXIII

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InGaAs NIR photodetectors are widely used due to their high responsivity, low noise, low dark current, fast response time, and large spectral range, which covers a range of 900 to 1700 nm and can be extended up to a 2600 nm cutoff. However, thermal drift is a major challenge that can affect the responsivity of these photodetectors, especially in miniaturized systems, where the thermal management problem is challenging. InGaAs photodetectors exhibit a highly nonlinear increase in responsivity near the cutoff, with an increase of about 4%/°C and a nonlinear reduction of about 0.25%/°C in the middle of the spectral range. This nonlinear drift cannot be corrected by common pre-processing methods used in spectroscopy. The change in responsivity near the cutoff is due to thermal-assisted bandgap reduction, while the change in responsivity in the middle of the spectral range is not well described in the literature. To address this issue, we applied the Urbach tail formula to model the nonlinear reduction of responsivity in the middle of the spectral range. The model showed an accuracy of approximately 90% compared to experimental thermal drift, allowing us to deduce the root causes of this phenomenon. Finally, we proposed compensation methods for the thermal drift, which were investigated using MOEMS FTIR spectral sensors as a case study. Some of these methods successfully reduced the drift that occurs due to a 60°C temperature change to less than 3%.

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Section: Quantum Efficiency and Responsivity Of Photodiodementioning

confidence: 99%

Spectral compensation of extended InGaAs photodetector thermal drift in miniaturized FTIR spectral sensors

Abozyd,

Mortada,

Saied

et al. 2024

MOEMS and Miniaturized Systems XXIII

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“…Nonetheless, when compared to their arsenide counterparts (GaAs or AlGaAs), the efficiency of III-nitride LEDs and LDs is largely unaffected by the dislocation density [86]. This effect is commonly attributed to localisation of carriers [86][87][88]. Instead of diffusing to, being trapped by, and recombining The effect of QW thickness fluctuations on carrier localisation was studied by Sonderegger et al [89] using TRCL.…”

Section: Carrier Localisationmentioning

confidence: 99%

Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

Loeto

2022

Materials Science and Technology

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The III-nitride family of semiconductors has proved essential in the design of important optoelectronic technology such as light-emitting diodes (LEDs). To improve our understanding of these materials and their devices it is important to unravel the mysteries of their carrier dynamics. Time-resolved cathodoluminescence (TRCL) is a characterisation technique wherein a pulsed electron beam is used to excite charge carriers in semiconductors. By analysis of the recorded datasets, deductions can be made about the activity of carriers in the period between their generation and recombination. The purpose of this review is to summarise work done on the use of TRCL in the understanding of III-nitride based materials and devices. The focus will be on quantum well LEDs and structural defect-related recombination.

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“…For AlGaN grown on GaN, the lattice mismatch restricts the AlGaN content and thickness. Figure 4 demonstrates the bandgaps versus lattice parameters of AlN-GaN-InN compounds [ 22 ]. InAlN, with around 18% In, is lattice-matched with GaN, and its wide bandgap makes it an ideal barrier.…”

Section: Introductionmentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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Investigation of Statistical Broadening in InGaN Alloys

Cited by 14 publications

References 5 publications

Spectral compensation of extended InGaAs photodetector thermal drift in miniaturized FTIR spectral sensors

Spectral compensation of extended InGaAs photodetector thermal drift in miniaturized FTIR spectral sensors

Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

The Evolution of Manufacturing Technology for GaN Electronic Devices

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