Investigation of strained Si/SiGe devices by MC simulation

Current Flow in Upcoming Microelectronic Devices

“…The latter one may be used for transport description when the carrier coherence length is larger than the devices size. Recent studies show that even for devices with the channel length as short as 15 nm scattering will still play a significant role [41] and therefore determine the current, in accordance with estimations of the mean-free path in MOSFET structures [39]. Crossover from diffusive to ballistic transport in Si nanowire transistors occurs at approximately 2 nm [42], a much shorter distance than previously anticipated.…”

“…Similar methods can be applied to describe the output characteristics of FinFETs in the ballistic approximation [38]. In silicon MOSFETs, however, the mean-free path in the area close to the potential maximum at 300 K is only a few nm [39], and the full quantum description which includes dissipative processes must be adopted to simulate MOSFETs with a gate length of around 10 nm. A consistent introduction of realistic scattering into simulators based on the coherent description alone creates outstanding computational difficulties ranging from a necessity to invert huge matrices in NEGF formalism [33] to calculations of nonlocal scattering rates in Pauli master equation approaches [40].…”

Current transport models for nanoscale semiconductor devices

“…The latter one may be used for transport description, when the carrier coherence length is larger than the device size. Recent studies show that even for devices with a channel length as short as 15 nm scattering will still play a significant role [8] and, therefore, determine the current, in accordance with estimations of the mean-free path in MOSFET structures [162]. The crossover from diffusive to ballistic transport in Si nanowire transistors occurs at approximately 2 nm [9], a much shorter distance than previously anticipated.…”

Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

“…At the same time there are growing evidences that scattering still controls the current in decananometer devices. Recent studies demonstrate that even for devices with a channel length as short as 15 nm scattering will play a significant role [1] and therefore determine the current, in accordance with estimations of the mean-free path in MOSFET structures [2]. The crossover from diffusive to ballistic transport in Si nanowire transistors occurs at approximately 2 nm [3], a much shorter distance than previously anticipated.…”