Investigation of structural, optical and electrical properties of ZnS thin films prepared by ultrasonic spray technique for photovoltaic applications

Derbali, A.; Attaf, A.; Saïdi, H.; Benamra, H.; Nouadji, M.; Aida, M.S.; Attaf, N.; Ezzaouia, Hatem

doi:10.1016/j.ijleo.2017.10.034

Cited by 38 publications

(10 citation statements)

References 34 publications

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“…The undoped ZnO lms showed an optical transmittance of > 70% while the Al-doped ZnO lms with higher dopant concentration (> 1 at.% exhibited slightly high optical transmittance (> 85%) than lms with lower doping concentration (≤ 1 at.%) of aluninium. In the present study, the absence of interference peaks in the transmittance spectra might be attributed to low lm thickness and small grain size of the grown lms [51].…”

Section: Optical (Uv-vis-nir) Analysissupporting

confidence: 49%

Characteristics of ZnO and Al Doped ZnO Thin Films Prepared by Sol Gel Method for Solar Cell Applications

Bouacheria

Djelloul

Adnane

2022

Preprint

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Pure and Al-doped ZnO (AZO) thin films with different aluminium (Al) concentrations (Al: 0.5, 1, 2, and 3 wt.%) were prepared on p-type Si(100) substrate by a dip-coating technique using different zinc and aluminum precursors. The structural, morphological, optical and electrical properties of these films were investigated using a number of techniques, including the X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Atomic force electron microscopy (AFM), ultraviolet–visible spectrophotometry, photoluminescence(PL) spectroscopy and four-point probe technique. The X-ray diffraction (XRD) results shown that the obtained (AZO) films were polycrystalline with a highly c-axis preferred (002) orientation, and the average crystallites size decrease from 28.32 to 24.61 nm with the increase in Al dopant concentration. The studies demonstrated that the ZnO film had a good transparency in the visible range with the maximum transmittance of 95% and the band gaps (Eg) varied from 3.16 to 3.26 eV by alumium doping. Scanning electron microscopy (SEM) images showed that the surface morphology of the films changed with increase of Al-doping. The photoluminescence spectra also showed changed with Al-doping.

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Section: Optical (Uv-vis-nir) Analysissupporting

confidence: 49%

Characteristics of ZnO and Al Doped ZnO Thin Films Prepared by Sol Gel Method for Solar Cell Applications

Bouacheria

Djelloul

Adnane

2022

Preprint

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“…As seen in Figure 5(a), the recorded UV-vis spectra revealed an absorption decrease as wavelength increases, showing an absorption edge at about 331 nm; however, the absorption value is exclusively dependent on various factors, including the structure of the material, the size of the NPs and the defects in grain structure. Figure 5(b) also depicts the bandgap energy as determined by Tauc's plot (Equation ( 2)) to be 3.75 eV [46,47].…”

Section: Sem Analysismentioning

confidence: 99%

Garlic Extract-Mediated Synthesis of ZnS Nanoparticles: Structural, Optical, Antibacterial, and Hemolysis Studies

Alnehia

Al-Odayni

Al-Hammadi

et al. 2023

Journal of Nanomaterials

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The green synthesis of zinc sulfide nanoparticles (ZnS NPs)-mediated plant extract is gaining importance because of its simplicity, cost-effectiveness, and ecofriendly nature. In this work, ZnS NPs were synthesized using garlic extract as NPs facilitating agent, characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscope, and UV–visible, then their antibacterial and hemocompatibility were assayed. Analysis revealed a cubic phase, 2.33 nm crystallite size, and a 3.75 eV optical bandgap. Bioactivity test against Staphylococcus aureus and Escherichia coli indicated dose-dependent potency closer to that of azithromycin standard drug and more efficient on S. aureus (Gram-positive) than E. coli (Gram-negative) bacteria. Biocompatibility test in terms of erythrocyte hemolysis, in reference to normal saline and water as minimal and maximal controls, confirmed nontoxic substance up to 100 μg/mL as the highest examined concentration and at which a lysis of 2.9% was detected. Therefore, it could be concluded that this biogenic method is effective in producing ZnS NPs with desirable properties for potential biomedical applications.

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“…The electrical conductivities of ZnS:Ni thin films were determined by two-probe technique in accordance with the following equation (Echendu et al, 2013;Derbali et al, 2018) and listed in Table 4.…”

Section: Electrical Analysismentioning

confidence: 99%

“…The fact that ZnS semiconductor can be produced as n-type and p-type increases the motivation of researches on the potential use of ZnS in CdTe, CIGS and CZTS based thin film solar cells (Doha et al, 2015;Kong, Deng & Chen, 2017). Using wide band gap materials such as ZnS instead of CdS, which is the most preferred semiconductor in solar cell structure, can further improve conversion efficiency (Tobbeche et al, 2019;Derbali et al, 2018;Chelvanathan et al, 2015). In addition, it is preferable to use ZnS semiconductor thin films as a window layer in solar cells due to their non-toxicity and wide band gap (Benyahia, Benhaya & Aida, 2015;Wang et al, 2017;Hernández-Castillo et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

Küçükarslan¹,

Demirselçuk²,

Kuş³

et al. 2021

JSTR

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This study presents the production of pure and different amounts of Ni-doped (4, 8, 12%) ZnS films on microscope glass substrate at 4005°C substrate temperature with Ultrasonic Spray Pyrolysis Technique and the effect of Ni doping on some physical properties of pure films. X-ray diffractometer (XRD), UV-Vis spectrophotometer, two-probe method and atomic force microscope (AFM) were used to analyze the structural, optical, electrical and surface properties of all films, respectively. XRD patterns contains broad peaks showing a low crystallinity level for the films. Ni doping caused ZnS films to have high absorbance values through the visible spectrum. Optical band gap energy values of ZnS:Ni thin films were determined to be between 3.71-3.96 eV. Two-probe measurements revealed that the electrical conductivity values of ZnS films increased significantly depending on the Ni doping. AFM results showed that the films have an almost homogeneous distribution with a rough surface. No significant change was observed for the surface properties of the films due to the Ni doping. As a result of all analyzes; it was seen that Ni doping has an important effect on the optical and electrical properties of ZnS films, without modifying the crystalline structure or surface texture.

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Investigation of structural, optical and electrical properties of ZnS thin films prepared by ultrasonic spray technique for photovoltaic applications

Cited by 38 publications

References 34 publications

Characteristics of ZnO and Al Doped ZnO Thin Films Prepared by Sol Gel Method for Solar Cell Applications

Characteristics of ZnO and Al Doped ZnO Thin Films Prepared by Sol Gel Method for Solar Cell Applications

Garlic Extract-Mediated Synthesis of ZnS Nanoparticles: Structural, Optical, Antibacterial, and Hemolysis Studies

Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

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