2008
DOI: 10.1016/j.apsusc.2008.05.115
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of surface morphology of SiC during SIMS analysis

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2010
2010
2013
2013

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…A paper by Fukumoto and co-workers investigated the surface morphology of silicon carbide that was bombarded by caesium ions under various conditions. 363 At a high angle of incidence, the surface was found to become more rough and this led to a greater change in secondary ion intensities. In addition, the secondary ion intensities changed even at a depth of less than several hundred nanometers.…”
Section: Depth-profiling Studiesmentioning
confidence: 99%
“…A paper by Fukumoto and co-workers investigated the surface morphology of silicon carbide that was bombarded by caesium ions under various conditions. 363 At a high angle of incidence, the surface was found to become more rough and this led to a greater change in secondary ion intensities. In addition, the secondary ion intensities changed even at a depth of less than several hundred nanometers.…”
Section: Depth-profiling Studiesmentioning
confidence: 99%