Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

Galeckas, Augustinas; Linnros, Jan; Frischholz, M.; Rottner, K.; Nordell, N.; Karlsson, Stefan; Grivickas, V.

doi:10.1016/s0921-5107(98)00510-8

Cited by 23 publications

(15 citation statements)

References 4 publications

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“…In order for highvoltage SiC bipolar devices to become feasible, long minority carrier lifetimes are needed to support effective conductivity modulation for low on-state resistance. Extended 1 and point defects, 2 surface recombination, 3 and structural quality 4,5 have all been shown to limit lifetime in this material. While the electron traps Z 1/2 and EH 6/7 have been investigated in this material for their influence on lifetime, 6-10 the main electron trap of concern in 8°off-axis, 4H-SiC was found to be the Z 1/2 trap.…”

Section: Introductionmentioning

confidence: 93%

Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

Myers-Ward

VanMil

Lew

et al. 2010

Journal of Applied Physics

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Intentionally doped n-type 4H-SiC films were grown on 4°and 8°off-axis substrates to investigate the influence of electron concentration on the incorporation of electron traps Z 1/2 and EH 6/7 . No discernible change was seen in the Z 1/2 and EH 6/7 trap concentrations for films grown on both orientations with electron concentrations in the range of 1 ϫ 10 14 to 1 ϫ 10 16 cm −3 , suggesting that the Z 1/2 and EH 6/7 traps are not associated with isolated carbon vacancies. The defect concentrations did not correlate with the measured carrier lifetimes, which is consistent with a carrier lifetime controlled by other recombination centers. Observed decreases in lifetime were related to increases in doping levels, with similar trends seen for both orientations. Carrier lifetimes in 8°material were slightly longer than in 4°films for similar doping concentrations, most likely being associated with surface recombination and/or extended defects.

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Section: Introductionmentioning

confidence: 93%

Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

Myers-Ward

VanMil

Lew

et al. 2010

Journal of Applied Physics

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“…Researchers have conducted lifetime measurements on several materials such as SiGe [156], SiC [157][158][159][160][161], diamond [162,163], GaAs [164][165][166], GaN [167,168], CdS [169], conjugated polymers [170], HgZnTe [171], etc., for understanding charge transport mechanisms and also for evaluating material quality and process studies. Since the charge transport properties of the material are essentially determined by the lifetime, comparison of lifetime value of a semiconductor with values obtained for common materials like silicon and germanium help us in comparative understanding of the properties and utilization of different materials for device fabrication.…”

Section: Use Of Carrier Lifetime To Evaluate Sic Materials Qualitymentioning

confidence: 99%

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Khanna

2005

Progress in Quantum Electronics

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“…The optical generation of charge carriers circumvents complications arising from chemical doping and, in addition, provides the opportunity to measure out-of-equilibrium parameters. a) Electronic mail: rubano@fisica.unina.it So far, the dynamics of photoinduced charge carriers in intrinsic 3C-and 6H-SiC has been studied using pumpprobe experiments [8][9][10] , however, with a time resolution of nanoseconds and at optical probe frequencies, far above the charge-carrier scattering rates that usually lye in the terahertz (THz) frequency range. 12 Deeper insight could be obtained by performing conductivity measurements using THz electromagnetic pulses having picosecond duration.…”

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confidence: 99%

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

Rubano¹,

Wolf²,

Kampfrath³

2014

Applied Physics Letters

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The terahertz conductivity of photoinduced charge carriers in two common polytypes of silicon carbide, 3C-SiC and 6H-SiC, is studied on picosecond timescales using an optical-pump / THz-probe technique. We find that the conductivity, measured from 0.7 to 3 THz, is well described by the Drude model, and obtain a velocity relaxation time of 75 fs, independent of sample and charge-carrier density. In contrast, the carrier relaxation rates in the two polytypes differ by orders of magnitude: in 6H-and 3C-SiC, recombination proceeds on a time scale of few picoseconds and beyond nanoseconds, respectively.The technological demand for high-power, hightemperature, and high-field electronic devices requires robust base materials. 1 In this respect, silicon carbide (SiC) is one of the most promising candidates owing to its excellent electrical and structural properties. SiC exists in a large number of polytypes that can be all thought of resulting from stacking three types of bilayer structures (A, B and C) in a certain periodic sequence. The most commonly encountered polytypes are 3C-SiC (stacking order ABC) and 6H-SiC (ABCACB), resulting in a zincblende (two atoms per unit cell) and hexagonal structure (twelve atoms per unit cell), respectively. 2 At room temperature, 3C-and 6H-SiC have an an indirect electronic energy gap of 2.36 eV and 3.0 eV, respectively. 2SiC exhibits exceptional properties that are to a large extent related to the Si-C bond, leading to a stronger localization of the charge density and a larger band gap compared to Si. 2,3 For example, the thermal conductivity of 4.9 and 5.0 W/cm K and breakdown electric field of 3.2 and 1.5 MV/cm for 6H-SiC and 3C-SiC, respectively, 4,5 are about 3 to 5 times larger than those of Si. 2 In addition, the various polytypes make SiC an interesting host material for controlling single electron spins. 6 Also, 6H-SiC may serve as suitable starting material for large-scale graphene production. 7 In order to improve the quality and performance of SiC-based devices, knowledge of fundamental parameters such as the mobility of charge carriers is crucial. Moreover, charge transport is also of considerable interest from the perspective of fundamental physics. So far, the carrier mobility has not been measured in the case of intrinsic samples since they are wide band-gap insulators. A possible approach is to create a transient free-carrier population, for instance by exciting the material with a light pulse. The optical generation of charge carriers circumvents complications arising from chemical doping and, in addition, provides the opportunity to measure out-of-equilibrium parameters. a) Electronic mail: rubano@fisica.unina.it So far, the dynamics of photoinduced charge carriers in intrinsic 3C-and 6H-SiC has been studied using pumpprobe experiments 8-10 , however, with a time resolution of nanoseconds and at optical probe frequencies, far above the charge-carrier scattering rates that usually lye in the terahertz (THz) frequency range. 12 Deeper insight could be obtained by per...

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Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

Cited by 23 publications

References 4 publications

Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Terahertz conductivity and ultrafast dynamics of photoinduced charge carriers in intrinsic 3C and 6H silicon carbide

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