2011 Help me understand this report
Investigation of switching phenomenon of Se75Te25−xGax amorphous system
Search citation statements
Paper Sections
Select...
1
Citation Types
0
1
0
Year Published
2012
2024
Publication Types
Select...
5
Relationship
0
5
Authors
Journals
Cited by 13 publications
(1 citation statement)
References 45 publications
0
1
0
“…Phase-change memory (PCM) based on chalcogenide compounds has been considered to be the most promising candidate for next-generation nonvolatile data storage techniques such as digital versatile disk-random access memory (DVD-RAM), due to its excellent physical performance [1][2][3][4][5][6]. Currently, Ge 2 Sb 2 Te 5 (GST) films are the best chalcogenide material for PCM and have received sustained attention [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…Phase-change memory (PCM) based on chalcogenide compounds has been considered to be the most promising candidate for next-generation nonvolatile data storage techniques such as digital versatile disk-random access memory (DVD-RAM), due to its excellent physical performance [1][2][3][4][5][6]. Currently, Ge 2 Sb 2 Te 5 (GST) films are the best chalcogenide material for PCM and have received sustained attention [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
