Investigation of TCADs Models for Characterization of Sub 16 nm In $$_{0.53}$$ Ga $$_{0.47}$$ As FinFET

Assessment of interface traps in In 0.53 Ga 0.47 As FinFET with gate‐to‐source/drain underlap for sub‐14 nm technology node to impede short channel effect

“…Aside from device physics models used in calibrating the 50 nm channel length, some other models are additionally included, for example, quantisation effects and non-parabolicity effects for sub-14 nm In 0.53 Ga 0.47 As nFinFETs to deal with quantum confinement effects [24]. The energy bandgap relations and the band structure of InGaAs that exhibit non-parabolic behaviour at various valleys are also considered in the device.…”