Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes

Abdullah, Shahrum; Tan, Chee Hing; Zhou, Xiaojing; Zhang, Shiyong; Pinel, Lucas L. G.; Ng, Jo Shien

doi:10.1364/oe.25.033610

Cited by 8 publications

(6 citation statements)

References 22 publications

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“…In addition, AlGaAsSb diodes show low temperature coefficient of breakdown voltage, Cbd = 0.86-0.91 mV/K [16] and high temperature and temporal stability [17]. A SAM-APD with InGaAs absorption region and AlAsSb avalanche region with a Cbd ~ 8 mV/K was reported [18].…”

Section: Introductionmentioning

confidence: 99%

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

Cao

Osman

Clarke

et al. 2022

J. Lightwave Technol.

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Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 μm at room temperature and a responsivity of 0.39 A/W at 1.55 μm wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.31±0.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.

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Section: Introductionmentioning

confidence: 99%

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

Cao

Osman

Clarke

et al. 2022

J. Lightwave Technol.

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“…3. More recent work [10], which focused on Al 0.85 Ga 0.15 As 0.56 Sb 0.44 p-i-n diodes, confirmed that the low C bd values is also valid between room temperature and 80 °C. Hence Al 0.85 Ga 0.15 As 0.56 Sb 0.44 exhibit very weak temperature dependence of avalanche gain and breakdown voltage.…”

Section: Temperature Dependencementioning

confidence: 73%

“…Our experimental data on the temperature dependence of avalanche gain and V bd of Al 1-x Ga x As 0.56 Sb 0.44 APDs cover from -193 to +80 °C [9,10]. In [9], V bd of four Al 1-…”

Section: Temperature Dependencementioning

confidence: 99%

AlGaAsSb Avalanche Photodiodes

Tan

2018

2018 IEEE Photonics Conference (IPC)

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Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics relevant to high-speed avalanche photodiodes. The data obtained show that the material AlGaAsSb has higher gain-bandwidth product, lower excess noise factors, and weaker temperature dependence, compared to current avalanche materials such as InP and InAlAs.

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“…Linearmode APD with a simpler device structure is also preferred because of the comparable time resolution to Geiger-mode APD [4]. Recently, Ge/Si APD [2,12] and APDs based on III-V semiconductor materials [13,14] with ultralow temperature dependency of the breakdown voltage have been demonstrated. However, these APDs have much higher multiplication excess noise than that of Si APDs due to the lower k-value (the ratio of ionization coefficient of holes over electrons) of silicon.…”

Section: Introductionmentioning

confidence: 99%

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Liu

Tang

et al. 2021

Micromachines

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Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.

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Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes

Cited by 8 publications

References 22 publications

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

AlGaAsSb Avalanche Photodiodes

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

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