Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device

Abstract

In this study, temperature dependent current–voltage (I–V) measurements and investigation of the dc current transport mechanism of Au/poly(4-vinyl phenol)/p-Si device have been performed. While the series resistance value displayed nearly temperature independent behaviour, the ideality factor varied between 7.26 and 2.76 in the temperature range 100–300 K. There is a linear relationship between the barrier height and the ideality factor which is attributed to barrier height inhomogeneities in the Au/poly(4-vinyl phenol)/p-Si device. The temperature dependent ideality factor behaviour shows that thermionic field emission theory is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 65 meV. It is concluded that poly(4-vinyl phenol) is a preferable organic insulator layer with low interface state density because the temperature dependent interface state density calculations give values of the order of 1012 eV−1 cm−2.

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

“…Several reported that if n varies between 1 and 2, the tunneling current mechanism is dominant, if n=2, the generation recombination current mechanism is dominant and if n>2, the leakage current mechanism is dominant [35]. The values of n and I s are found to be ( [37].The barrier height  b can be calculated from the following relation:…”

Temperature Dependent Electrical Transport in Al/Poly(4-vinyl phenol)/p-GaAs Metal-Oxide-Semiconductor by Sol-Gel Spin Coating Method

“…In this technique, an organic interfacial layer is inserted between inorganic semiconductor and metal. As they can be applied to various areas like solar cells and Schottky diodes, there has been a growing interest in polymers such as poly(4-vinyl phenol), polyaniline, polyvinyl alcohol (PVA), poly(alkylthiophene) polypyrrole, polythiophene, and poly(3-hexylthiophene) [7][8][9][10][11][12][13][14][15][16][17][18]. In polymers, we find local free-volume holes or cavities of atomic and molecular dimensions, which may be the result of irregular packing of the molecules in amorphous phase (static and preexisting holes) and molecular relaxation of polymer chains and terminal ends (dynamic and transient holes).…”

Physical properties of Co/n-Ge Schottky contacts

“…[10] In the case of germanium, the different experimental observations tend to strengthened one or the other theory. [4,[11][12][13] However, in most of the case, possible SBHs non-homogeneities which can alter the electrical properties of real MS contacts [14][15][16][17] are not taken into account.…”