Investigation of the 4H–SiC surface

Focused Ion Beam Methods for Research and Control of HEMT Fabrication

“…Some defects have distinct hexagonal form. Similar defects were observed in [9]. At the same time on the bottom of not through holes defects in the form of deepenings of irregular shape are observed.…”

Kinetic study of interfacial solid state reactions in the Ni/4H–SiC contact

“…The layer surface of the sample is relatively flat, at which a contact layer is thicker than the as-deposited (50 nm). The surface shape might depend on surface defects of SiC single crystal, the initial island growth of nickel silicides and voids covered by some of the excess carbon at the interface [5,22,26,27,29]. The EDS analyses of the two spots in the reaction region detected the high carbon contents (about 80 mol%) of the layer (Fig.…”

Investigation of ferromagnetism in Al-doped 4H–SiC by density functional theory

“…SiC has more than 200 different polytype structures according to the stacking sequence of the atomic double layers in the crystal. 4H-SiC is one of the most important polytype structures because it has large energy gap (3.26 eV), high breakdown electric field (2.3 MV/cm for a 600 V device blocking rating), high carrier mobility [2], and high thermal conductivity (about three times than silicon's), which makes 4H-SiC devices can be used at higher blocking voltage and higher temperature than silicon devices. Recently, Song's group firstly reported the observation of glassy ferromagnetism (FM) in Al-doped 4H-SiC [3].…”