Investigation of the ablation of zinc oxide thin films on copper–indium-selenide layers by ps laser pulses

Heise, G.; Dickmann, Marcel; Domke, Matthias; Heiß, A.; Kuznicki, Thomas; Palm, J.; Richter, Isabel; Vogt, Helmut; Huber, Heinz P.

doi:10.1007/s00339-010-6159-1

Cited by 41 publications

(18 citation statements)

References 17 publications

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“…With the high precision of ps‐laser ablation, it is possible to ablate only the highly conductive transparent ZnO layer on top of the CIS (referred to as “ZnO on CIS”). But the ps‐laser P3 process can be also conducted by ablating the ZnO and CIS films on top of the Mo layer, similar to mechanical scribing (“ZnO and CIS on Mo”) .…”

Section: Methodsmentioning

confidence: 99%

“…However, the behavior is slightly different for induced laser ablation processes. If a combination of transparent and absorbing layers has to be ablated selectively as, for example, with a combination of a transparent thin film on an absorbing substrate or—vice versa—of an absorbing film on a transparent substrate, under such conditions, the absorbing partner is causing and inducing the ablation by partially evaporating and “indirectly inducing” the ablation of the transparent film (P3, ZnO on CIS) or by being itself ablated via “directly induced” ablation (P1, Mo under glass side illumination) .…”

Section: Methodsmentioning

confidence: 99%

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Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells

Heise

Heiß²,

Hellwig

et al. 2012

Progress in Photovoltaics

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We report on the optimization of selective picosecond laser structuring for the monolithic serial interconnection of (Cu(In,Ga)(S,Se)2) CIS thin film solar cells. We introduce a quantitative value to compare the energy efficiency of the different investigated laser processes, the specific ablation energy, which indicates the required energy to remove a certain volume of the specific material. We have examined the structuring efficiencies for induced laser ablation processes for a modification of the beam profile (elliptical and flat‐top beam shaping) and for the application of different laser wavelengths (1064 and 532 nm). Application of induced laser processes (often referred as “lift‐off”) decreases the specific ablation energy dramatically by nearly one order of magnitude. Modifications of the beam profile such as elliptical and flat‐top beam shaping are nearly halving the energy per ablated volume relative to a circular beam. The application of a laser wavelength 532 nm decreases the specific ablation energy compared with 1064 nm significantly for processes involving the CIS layer. We finally demonstrate that with a picosecond laser power of only 2 W, the molybdenum back contact (P1, glass side) and the ZnO front contact (P3, ZnO on CIS) can be structured with a process speed of up to 4 m/s. About 2 µm thick CIS layer (P2) is structured by standard direct laser ablation at higher energy densities with 200 mm/s. Copyright © 2012 John Wiley & Sons, Ltd.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells

Heise

Heiß²,

Hellwig

et al. 2012

Progress in Photovoltaics

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“…It was also demonstrated that ultra-short pulses significantly reduce the thermal influence in contrast to ns-lasers, and thus enable a selective removal of matter [2,3,6,7,8]. Moreover, several investigations demonstrated, that laser lift-off processes efficiently remove and transfer thin absorbing layers from transparent substrates [1,2,5,9,10].…”

Section: Introductionmentioning

confidence: 94%

Time and space resolved microscopy of induced ablation with ultra-short laser pulses

et al. 2012

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Laser lift-off processes have been observed during structuring CIS thin film solar cells with ultra-short laser pulses, if a Mo film on glass is irradiated from the glass substrate side. To investigate the underlying physical effects, ultrafast pump-probe microscopy is used for time-and space resolved investigations. The setup utilizes a 660 fs-laser pulse at a wavelength of 1053 nm that is split up into a pump and a probe pulse. The pump pulse ablates the thin film, while the frequency doubled probe pulse illuminates the ablation area after an optically defined delay time of up to 4 ns. For longer delay times, a second electronically triggered 600 ps-laser is used for probing. Thus, the complete ultra fast pulse initiated ablation process can be observed in a delay time range from femtoseconds to microseconds.First experiments on the directly induced ablation of molybdenum films from the glass substrate side show that mechanical deformation is initiated at about 400 ps after the impact of the pump laser pulse. The deformation continues until approximately 15 ns, then a Mo disk shears and lifts-off with a velocity of above 70 m/s free from thermal effects.

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“…Laser direct scribing for the patterning of ZnO, copper indium diselenide (CIS), Mo film used in thin film solar cells has been studied for several years [3][4][5][6][7][8] and is well established in industry. The advantages of this method are that it can improve productivity, reduce the cost of production and decrease the chemical pollution of the environment.…”

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confidence: 99%

Selective patterning and scribing of Ti thin film on glass substrate by 532 nm picosecond laser

2012

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In this paper, the feasibility of Ti film coated on glass substrate scribed via a 532 nm picosecond laser is investigated. Laser irradiations from the film side and from the transparent substrate side are performed for comparison. Optical microscopy, SEM, surface stylus and contact resistance measurement reveal that the Ti film can be completely removed with no damage to the glass substrate, using optimized process parameters. The complete removal threshold for the film for front-side scribing is found at 120 mJ/cm 2 , while the minimum laser fluence for complete scribing is 70 mJ/cm 2 in the case of back-side scribing. The lines scribed from the front side exhibit obvious thermal effects such as heat affected zones, burr and micro cracks. Backside scribing exhibits non-thermal behavior, which also can increase the process speed for the scribing of a Ti film on glass to 1000 mm/s. This makes the back-side laser scribing of Ti film a promising technique.

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Investigation of the ablation of zinc oxide thin films on copper–indium-selenide layers by ps laser pulses

Cited by 41 publications

References 17 publications

Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells

Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells

Time and space resolved microscopy of induced ablation with ultra-short laser pulses

Selective patterning and scribing of Ti thin film on glass substrate by 532 nm picosecond laser

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