2003
DOI: 10.1016/s0030-4018(03)01543-8
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Investigation of the carrier density dependence on the confinement factor in a bulk semiconductor optical amplifier with a ridge waveguide

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Cited by 3 publications
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“…Several models have been published to simulate the carrier-induced nonlinearities in SOAs. Alvarez et al [9] demonstrated the confinement-factor difference between transverse-electric (TE) and transverse-magnetic (TM) mode on the dependence of the carrier density in a bulk SOA, whereas Zhao et al [10] predicted the polarization variations of the probe light as a function of its power level and the bias current of SOAs, but no pump light was involved in their model. Soto et al [11] investigated the phase-shift efficiency in terms of pump-and probe-light polarization in a pump-probe scheme, and Dorren et al [6] extended the theory and applied it to all-optical flip-flop memories.…”
mentioning
confidence: 99%
“…Several models have been published to simulate the carrier-induced nonlinearities in SOAs. Alvarez et al [9] demonstrated the confinement-factor difference between transverse-electric (TE) and transverse-magnetic (TM) mode on the dependence of the carrier density in a bulk SOA, whereas Zhao et al [10] predicted the polarization variations of the probe light as a function of its power level and the bias current of SOAs, but no pump light was involved in their model. Soto et al [11] investigated the phase-shift efficiency in terms of pump-and probe-light polarization in a pump-probe scheme, and Dorren et al [6] extended the theory and applied it to all-optical flip-flop memories.…”
mentioning
confidence: 99%