Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs

Badawi, Nasser; Hilt, Oliver; Behat-Treidel, Eldad; Böcker, Jan; Würfl, Joachim; Dieckerhoff, Sibylle

doi:10.1109/ecce.2015.7309785

Cited by 28 publications

(19 citation statements)

References 7 publications

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“…Because dynamic Rds,on is a very time-dependent phenomenon, it is important to capture this measurement as early as possible. A comprehensive study of dynamic Rds,on over several operating conditions was performed in [55] using this clamping technique. Temperature, load current, and bus voltage are all significant factors.…”

Section: E Dynamic Rdsonmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

912

324

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GaN power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. Additionally, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters as these devices become increasingly available on a commercial scale.

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Section: E Dynamic Rdsonmentioning

confidence: 99%

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Jones

Wang

Costinett

2016

IEEE J. Emerg. Sel. Topics Power Electron.

912

324

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“…However, research from both academia and industry reveals that the on-state drain-source resistance (RDS(on)) of GaN E-HEMTs changes under different operation conditions, which complicates the conduction loss estimation. Therefore, characterizing RDS(on) on GaN devices has been attracting increasing attention [20][21][22][23][24][25][26][27][28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

“…Researchers have shown that RDS(on) depends on various parameters, e.g., the operating voltage, junction temperature, duty cycle, switching frequency, load current, gate resistance, switching modulation, and GaN semiconductor production process [20], [22][23][24][25][26][27][28][29][30]. As a result, the RDS(on) variation becomes complicated, which makes the accurate power loss calculation challenging.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, refs. [23] and [26] apply a relatively long (≥ 1s) or random soak time (i.e., the electron trapping time) in the R DS(on) characterization; thus, they claim that a long soak time can increase the dynamic RDS(on). However, the actual soak time is less than 100 µs because the switching frequency is higher than 10 kHz in most GaN E-HEMT based systems.…”

Section: Introductionmentioning

confidence: 99%

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Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance

Hou¹,

Shen

Zhao

et al. 2020

IEEE Trans. Transp. Electrific.

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Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless, GaN HEMTs exhibit a more pronounced dynamic on-state resistance RDS(on) than silicon transistors. The variation of RDS(on) is caused by both the static RDS(on) due to junction temperature rise and the dynamic R DS(on) due to the electron trapping. Without a careful decoupling analysis, it is difficult to calculate and model the dynamic RDS(on) portion. This paper introduces a comprehensive approach of dynamic RDS(on) evaluation, comprising four techniques: 1) a clamping circuit for both the hard-switching (HS) device and synchronous rectification (SR) device; 2) a junction temperature monitoring technique; 3) control of both the pulse test and soak time; 4) continuous operation of device under test. Based on the dynamic RDS(on) test results, a new model of the RDS(on)variation is developed where two coefficients: kTj and kdR are defined to model the contribution of the heating effect and the impact of the trapping effect, respectively. The RDS(on) model is validated by the comparison between the calculated and measured junction temperatures of a 650 V/30 A GaN-based half-bridge. Furthermore, a detailed loss breakdown analysis is conducted for the GaN-based hard-switching half-bridge. Results show that the switching losses, Eon and Eoff are the dominant loss factors with high switching frequency. At last, the possible efficiency improvements are also discussed in detail.

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“…In the published work [11]- [15], authors use different types of the circuit to investigate GaN device dynamic R DSon value under hard switching condition, in which DUT gate source voltage V GS , V DS(m.) , and drain current I D waveform are shown in Fig. 1(b) (supposing I C is in continuous mode).…”

Section: Introductionmentioning

confidence: 99%

Accurate Measurement of Dynamic on-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter

Videt²,

Idir³

et al. 2020

IEEE Trans. Power Electron.

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Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance R DSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce its turn-ON switching losses. When GaN transistor finishes ZVS during one switching period, device has been operated under both reverse and forward conduction. Therefore its dynamic R DSon under both conduction modes needs to be carefully measured to understand device power losses. For this reason, a measurement circuit with simple structure and fast dynamic response is proposed to characterize device reverse and forward R DSon. In order to improve measurement sensitivity when device switches at high frequency, a trapezoidal current mode is proposed to measure device R DSon under almost constant current, which resolves measurement sensitivity issues caused by unavoidable measurement circuit parasitic inductance and measurement probes deskew in conventional device characterization method by triangle current mode. Proposed measurement circuit and measurement method is then validated by first characterizing a SiC-MOSFET with constant R DSon. Then, the comparison on GaN-HEMT dynamic R DSon measurement results demonstrates the improved accuracy of proposed trapezoidal current mode over conventional triangle current mode when device switches at 1 MHz.

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Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs

Cited by 28 publications

References 7 publications

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance

Accurate Measurement of Dynamic on-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter

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