Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

Eremenko, M. M.; Shandyba, N A; Chernenko, N. E.; Balakirev, S. V.; Nikitina, L S; Солодовник, М. С.; Ageev, O A

doi:10.1088/1742-6596/2086/1/012027

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…В последнее время в качестве альтернативного метода, позволяющего реализовать управление параметрами ННК при устранении (или минимизации) основных недостатков описанных выше подходов, активно изучается локальная ионно-лучевая обработка поверхности с помощью фокусированного пучка ионов Ga [20][21][22][23]. Данный метод позволяет проводить технологические операции локального ионно-лучевого травления с высоким пространственным разрешением в условиях высокого вакуума без необходимости применения резистов, масок и химического травления [24][25][26][27]. При этом метод фокусированного ионного пучка (ФИП) может использоваться как для формирования углублений в слое маскирующего окисла в структурах SiO 2 /Si (с последующей локализацией в них капель катализатора) [20], так и для прямого локального формирования каталитических центров -в случае использования пучков ионов Ga и самокаталитического ПЖК-роста [21]…”

Section: Introductionunclassified

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

Шандыба¹,

Черненко²,

Балакирев³

et al. 2022

Физика И Техника Полупроводников

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This paper presents the results of experimental studies of the effect of the Ga ion dose during ion-beam treatment of the Si(111) surface using the focused ion beam technique on the GaAs nanowires epitaxial growth processes. A significant difference is revealed between the parameters of nanowire arrays formed on modified and unmodified areas of the Si substrate in this way. It is shown that changing the Ga ions dose from 0.052 to 10.4 pC/μm^2 during ion-beam treatment makes it possible to form GaAs nanowires arrays with a different set of parameters in a single technological cycle with a high degree of localization. The regularities of the influence of the dose of Ga ions during surface modification on the key characteristics of GaAs nanowires (density, diameter, length, and orientation with respect to the substrate surface) are experimentally established.

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Section: Introductionunclassified

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

Шандыба¹,

Черненко²,

Балакирев³

et al. 2022

Физика И Техника Полупроводников

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“…This method represents local ion-beam surface treatment by means of the focused beam of the Ga ions [20][21][22][23]. This method is designed to perform the technological operations of the local ion-beam etching with high spatial resolution in high-vacuum conditions without the need of applying the resists, the masks and chemical etching [24][25][26][27]. At the same time, the focused ion beam (FIB) method can be used both for forming depressions both in a masking oxide layer in the SiO 2 /Si structures (with subsequent localization of catalyst droplets therein) [20] and for direct local formation of the catalyst centersin case of using the Ga ion beams and of the self-catalyst VLS growth [21].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the influence of the ion-beam treatment dose of the Si(111) surface on the GaAs nanowires growth processes

et al. 2022

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This paper presents the results of experimental studies of the effect of the Ga ion dose during ion-beam treatment of the Si(111) surface using the focused ion beam technique on the Ga+ nanowires epitaxial growth processes. A significant difference is revealed between the parameters of nanowire arrays formed on modified and unmodified areas of the Si substrate in this way. It is shown that changing the Ga ions dose from 0.052 to 10.4 pC/μm2 during ion-beam treatment makes it possible to form GaAs nanowires arrays with a different set of parameters in a single technological cycle with a high degree of localization. The regularities of the influence of the dose of Ga ions during surface modification on the key characteristics of GaAs nanowires (density, diameter, length, and orientation with respect to the substrate surface) are experimentally established. Keywords: Focused ion beam, nanowires, GaAs, molecular beam epitaxy.

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Template-assisted growth of Ga-based nanoparticle clusters on Si: effect of post-annealing process on the Ga ion beam exposed 2D arrays fabricated by focused ion beam nanolithography

Radhakrishnan,

Rangarajan,

Pandian

et al. 2024

Nanotechnology

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We demonstrate template-assisted growth of gallium-based nanoparticle clusters on silicon substrate using a focused ion beam (FIB) nanolithography technique. The nanolithography counterpart of the technique steers a focussed 30 kV accelerated gallium ion beam on the surface of Si to create template patterns of two-dimensional dot arrays. Growth of the nanoparticles is governed by two vital steps namely implantation of gallium into the substrate via gallium beam exposure and formation of the stable nanoparticles on the surface of the substrate by subsequent annealing at elevated temperature in ammonia atmosphere. The growth primarily depends on the dose of implanted gallium which is in the order of 107 atoms per spot and it is also critically influenced by the temperature and duration of the post-annealing treatment. By controlling the growth parameters, it is possible to obtain one particle per spot and particle densities as high as 109 particles per square centimetre could be achieved in this case. The demonstrated growth process, utilizing the advantages of FIB nanolithography, is categorized under the guided organization approach as it combines both the classical top-down and bottom-up approaches. Patterned growth of the particles could be utilized as templates or nucleation sites for the growth of an organized array of nanostructures or quantum dot structures.

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Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

Cited by 3 publications

References 10 publications

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

Investigation of the influence of the ion-beam treatment dose of the Si(111) surface on the GaAs nanowires growth processes

Template-assisted growth of Ga-based nanoparticle clusters on Si: effect of post-annealing process on the Ga ion beam exposed 2D arrays fabricated by focused ion beam nanolithography

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