Investigation of the Effect of the Substrate Position Relative to the Source on the Optoelectrical and Structural Properties of Pure Nanostructured Tin Oxide by APCVD

Abstract

Pure tin oxide (TO) films are deposited onto glass substrates at various substrate angles relative to the source position by a simple and inexpensive method of atmospheric pressure (AP)CVD. The deposition temperature is constant at about 500°C, and oxygen with a flow rate of 100 sccm is used as both the carrier gas and the oxidizing agent. Investigation of the sheet resistance shows that resistivity varies between 106 and. 241 V/&. X-ray diffraction (XRD) also reveals that the structure is polycrystalline with the preferred orientation of (110) for all films deposited at the various substrate angles. Scanning electron microscopy (SEM) images also reveal a uniform and impacted structure on the surface of all the films. Optical properties show clear changes as a result of the substrate position versus the source.

In situ mass spectrometry analysis of chemical vapour deposition of TiO2thin films to study gas phase mechanisms

“…Atmospheric pressure CVD (APCVD) is the most basic method of chemical vapour deposition, simply heating precursors to roughly half of its boiling point so that a vapour is evolved, then pushing the vapour to a heated reactor where it decomposes, depositing a film onto a substrate. 3 This method is commonly employed to deposit functional metal oxide thin films from simple molecular precursors, including TiO2, [4][5][6] VO2(M), [7][8][9] SnO2, [10][11][12] Fe2O3, 13 WO3, 14,15 ZnO, [16][17][18] α-Al2O3, 19,20 as well as many others. 21 Despite widespread use in the deposition of metal oxide coatings, little is known about reactions that occur within the gas phase during the deposition of the thin film.…”