Dependence of O2, N2 flow rate and deposition time on the structural, electrical and optical properties of SnO2 thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

Fadavieslam, M. R.; Azimi-Juybari, H.; Marashi, Maryam Sadat

doi:10.1007/s10854-015-3835-0

Cited by 8 publications

(2 citation statements)

References 21 publications

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“…The light transmittance of SnO 2 ‐coated FTO substrate decreases as the thickness of SnO 2 layer increases which agrees well with the previously observed transmittance spectra . It can also be seen that the transmittance spectra of bare FTO and SnO 2 ‐coated FTO indicated fluctuating pattern as a result of low reflectivity and interference effect of scattered light within the FTO and SnO 2 layers …”

Section: Resultssupporting

confidence: 89%

Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Noh

Soh

Riza

et al. 2018

Physica Status Solidi (b)

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Tin (IV) oxide (SnO 2 ) is a stable semiconductor and has been used in a wide range of applications. In this work, aerosol-assisted chemical vapor deposition (AACVD) technique is employed to deposit SnO 2 thin film with different layer thicknesses by controlling the deposition time. The morphological and optical properties of SnO 2 layer are investigated thoroughly to understand the relationship between the deposition time and SnO 2 performance in photoelectrochemical cells. The bandgap energy of all SnO 2 thin films is determined to be 3.65 eV. However, from linear sweep voltammetry (LSV) analysis, it is found that SnO 2 layer deposited for 15 min, which produced a layer with thickness of about 50 nm, showed the best photocurrent performance (30.7 mA cm À2 at 1.0 V vs. Ag/AgCl) compared to their thinner or thicker counterparts. The right thickness enables the formation of a film with complete surface coverage, which effectively prevents current leakage and allows optimum light absorption. Besides, electrochemical impedance spectroscopy (EIS) analysis confirms that 50 nm thick SnO 2 layer possesses fastest electron transfer property compared to thicker or thinner layers.

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Section: Resultssupporting

confidence: 89%

Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Noh

Soh

Riza

et al. 2018

Physica Status Solidi (b)

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show abstract

“…It increases as the Fermi energy moves further into the energy gap from the bottom edge of the conduction band. It, therefore, inevitably follows that the smaller the carrier concentration, the larger the Seebeck coefficient (Fadavieslam, et al 2016). For a better perspective, Sebeck coefficient � = ∆ � at the 100 C o temperature difference of all the samples is presented in Table 2.…”

Section: Electrical Propertiesmentioning

confidence: 99%

The effect of copper doping on the structural, optical, and electrical properties of cadmium oxide thin films using the spray pyrolysis technique

Davari

Fadavieslam

2021

Preprint

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In this study, the pure and Cu doped CdO thin films with various doping concentrations (0 to 5 at.%) were deposited on soda-lime glass substrates, using the chemical spray pyrolysis technique. The effects of Cu doping on the structural, optical, and electrical properties of thin films were, then, investigated. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy equipped with an energy dispersive x-ray analyzer (FESEM-EDX), atomic force microscopy (AFM), ultraviolet-visible spectroscopy, and electrical resistance; van der Pauw techniques were also used to measure the Hall effect. X-ray diffraction studies showed that the thin films were polycrystalline only with cadmium oxide phase with the cubic face-centered crystal structure and the preferred orientations were along (111), (200), (220), (311), and (311) planes. The FE-SEM and AFM images also showed that with an increase in Cu doping levels, the grain size and surface roughness of the thin films decreased from 472 to 38 nm and from 163 to 54 nm, respectively. The expected element compositions were confirmed by EDX. The optical bandgap of the thin films ranged from 2.42 to 2.56 eV, and as Cu dopant increased, so, too, the optical bandgap. As the Cu doping concentration increased from 0 to 5 (at.%), the electrical resistivity and Seebeck coefficient were found to increase from 3.74⋅10− 4 to 8.77⋅10− 3 Ω.cm and 8.28⋅10− 6 to 2.52⋅10− 5 v/k (at 100 Co temperature difference), respectively; the carrier concentration and carrier mobility were also found to decrease from 3.24⋅1020 to 1.76⋅1020 cm− 3 and from 55.5 to 4.05 cm2/v.s, respectively. The Hall effect and thermoelectric studies revealed that the films exhibited an n-type conductivity.

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Dependence of O2 and Ar2 flow rates on the physical properties of ATO thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

Fadavieslam

Sadra

2017

Appl. Phys. A

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Dependence of O2, N2 flow rate and deposition time on the structural, electrical and optical properties of SnO2 thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

Cited by 8 publications

References 21 publications

Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

The effect of copper doping on the structural, optical, and electrical properties of cadmium oxide thin films using the spray pyrolysis technique

Dependence of O2 and Ar2 flow rates on the physical properties of ATO thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

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Dependence of O2, N2 flow rate and deposition time on the structural, electrical and optical properties of SnO2 thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

Cited by 8 publications

References 21 publications

Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD

Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD

The effect of copper doping on the structural, optical, and electrical properties of cadmium oxide thin films using the spray pyrolysis technique

Dependence of O2 and Ar2 flow rates on the physical properties of ATO thin films deposited by atmospheric pressure chemical vapor deposition (APCVD)

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Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD