Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy

“…In addition, the deep level defects can act as generation recombination centers and most likely they will play a role in carrier recombination in the reverse current characteristics. 13,14…”

“…In addition, the deep level defects can act as generation recombination centers and most likely they will play a role in carrier recombination in the reverse current characteristics. 13,14 In order to study the electrical parameters of the diodes, such as ideality factor (n), built-in potential (V bi ), and series resistance (R s ), the thermionic emission equation 15 was used, which is represented by:…”