2005
DOI: 10.1063/1.1999297
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Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Abstract: The electron-beam-induced current (EBIC) mode of scanning electron microscopy was employed to investigate the nucleation and development of stacking faults (SFs) during forward high current stress operation of 4H–SiC p-i-n diodes. The EBIC technique is shown to be a valuable tool for the visualization and analysis of mobile and immobile partial dislocations bounding the SFs and their recombination activity. Both Si and C core partial dislocations exhibit similar EBIC contrast. It is shown that threading edge d… Show more

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Cited by 29 publications
(19 citation statements)
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“…Silicon carbide is a covalent crystal in which atoms have sp 3 -type hybridization. The covalent bonds between atoms with sp 3 -type of hybridization can explain polytypism in SiC.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Silicon carbide is a covalent crystal in which atoms have sp 3 -type hybridization. The covalent bonds between atoms with sp 3 -type of hybridization can explain polytypism in SiC.…”
Section: Discussionmentioning
confidence: 99%
“…In terms of the dislocation, the transition mechanism of the cubic structure to the hexagonal structure is discussed in the articles [1][2][3][4][5][6][7]. In terms of formation of the multilayers polytypes, transition of the hexagonal structure to the cubic one is discussed in [8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…[2]. Appearance of the thin line structure in DL spectra requires both the minimum concentration of uncompensated impurity (N D -N A ), and definitely expressed distortions of crystal structure.…”
Section: Resultsmentioning
confidence: 99%
“…Continuous improvement of crystal growth techniques is related with understanding the nature of defects in crystalline materials. Defects exist in as-grown crystals and are also formed during device processing stages [1][2][3][4][5][6][7]. Defects can be annealed at high temperature [8], can transform into complexes.…”
Section: Introductionmentioning
confidence: 99%
“…Great advances were reported in growing a single crystalline polytype by controlled sublimation and chemical vapor deposition [1][2][3]. Polytypic transformation in SiC was investigated by many authors [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%