Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions

Abstract

We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively sputtered TiO2 thin film between Pt and Ti/Pt electrodes, respectively. As most resistance switching materials, TiO2 needs to be electroformed before it can be switched. This paper presents and compares current and voltage controlled electroforming with regard to the polarity. We show that a current-driven electroforming with negative polarities leads into the switchable high resistive state without need for a current compliance. These devices show an improved stability and reliability in bipolar resistive switching performance.

Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

“…This polarity, however, defines the state obtained after the EF, as a positive voltage puts the sample in the HRS and a negative voltage in the LRS. This polarity dependence can be linked to the motion of oxygen anions in the oxide, frequently described by the equivalent motion of oxygen vacancies, which is obviously polarity dependent and has been previously observed in TiO 2 -based structures [23]. The motion of oxygen vacancies has also been already suggested to explain the unipolar RS in SiO x -based MIM structures [11].…”

Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes

“…23 Hence, in the case of bipolar-type memory cells, more complicated varistor type-elements with specific degrees of non-linearity (high current density and threshold voltage) are required at both polarities. 23 Recently, different concepts such as complementary resistance switches, 24,25 inherent rectifying resistance switching elements, 26 and Schottky interface based selection devices 27 have also been investigated to solve crosstalk problem for bipolar resistance switching based crossbar arrays.…”

Local On/Off Currents in BiFeO3 Thin Films Modulated by Bipolar Polarization Orientations

“…The polarization reversal changes the p-n junction polarity and thus the on/off current direction for the realization of a large electroresistance effect. Note that the oxygen vacancies with a low mobility of 2.3 × 10 −12 cm 2 /V·s are nearly immobile during this junction switching within a few tens of nanoseconds [17], which possesses a better reliable performance over defect-related switching mechanisms through the repetitive creation and rupture of conductive paths in other oxide thin films [18][19][20]. The response speed of the diode current could be limited due to the deep donor level of oxygen vacancies in comparison to other semiconductors.…”