Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013) 2014
DOI: 10.7566/jpscp.3.012021
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Investigation of the Energy Gap in Sm1−xB6and Sm1−xLaxB6Kondo Insulators

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Cited by 5 publications
(5 citation statements)
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“…In the microfabricated sample (S6), the magnitude of the resistivity plateau was found to be significantly smaller than the macroscopic samples which likely originates from a parallel conduction channel formed in the FIB processing [24]. In general, the variation in IRR values reflects different levels of disorder or off-stoichiometry [25]. In sample S3, the low-temperature plateau in the resistivity exists down to 0.4 K.…”
Section: Resultsmentioning
confidence: 99%
“…In the microfabricated sample (S6), the magnitude of the resistivity plateau was found to be significantly smaller than the macroscopic samples which likely originates from a parallel conduction channel formed in the FIB processing [24]. In general, the variation in IRR values reflects different levels of disorder or off-stoichiometry [25]. In sample S3, the low-temperature plateau in the resistivity exists down to 0.4 K.…”
Section: Resultsmentioning
confidence: 99%
“…Single crystals of SmB 6 used in the present study were grown by means of the image furnace technique [19] in order to achieve high purities as characterised by the high inverse residual resistivity ratio. Single crystals with inverse resistance ratios [IRR = R(T = 1.8 K)/R(T = 300 K), where R is resistance and T is temperature] of the order of 10 5 were selected for this study; the IRR has been shown to characterise crystal quality, with the introduction of point defects by radiation damage [20], or through off-stoichiometry [21] resulting in a decrease in low temperature resistance and an increase in high temperature resistance. The resistance of a SmB 6 single crystal is shown in Fig.…”
mentioning
confidence: 99%
“…2(a) compares the resistivity as a function of temperature of the floating zone-grown single crystal SmB 6 used for our quantum oscillation measurements, the isotopic floating zone-grown crystal of ref. [12], and crystals grown by various other techniques [24,25,26]. We find that single crystals grown by the floating-zone method exhibit the largest values of iRRR.…”
Section: Laliberte Et Almentioning
confidence: 83%
“…Electrical resistivity as a function of temperature on single crystals of SmB 6 grown by different methods, normalised to the resistivity at 300 K. The inverse residual resistivity of floating zone-grown single crystals of SmB 6 used to measure quantum oscillations in this study reach a value of the order 10 5 , higher than the isotopic floating zone-grown sample with minimal rare-earth impurities from ref. [12], and more than an order of magnitude higher than samples grown by other growth methods (flux [24], induction melting [25], layer evaporation [26]).…”
Section: Laliberte Et Almentioning
confidence: 87%