Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices

Zhou, Jiao; Ji, Hong-Kai; Lan, Tian; Yan, Junbing; Zhou, Wenli; Miao, Xiangshui

doi:10.1007/s11664-014-3390-0

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…26) Zhou et al measured the thicknesses (19.9 ∼ 570 nm) of HSQ films prepared at different spin speeds and concentrations, adopted HSQ as a surrounding insulator in phase-change memory, and demonstrated a low operation current when HSQ was adopted. 27) However, this is a lack of a general equation to describe the relationship of the HSQ thickness and spin speed and concentration in these reports. It has also not been reported that the ultrathin HSQ film can be used as an insulting layer for the tunneling of electrons in other studies according to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer

Akahane¹,

Ishii²,

Yanagisawa³

et al. 2023

Jpn. J. Appl. Phys.

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In this study, we investigated a parallel metal-insulator-metal (MIM) diode with an ultrathin spin-coated hydron silsesquioxane (HSQ) layer. Ti and Au were adopted as the metal electrodes for the large work function difference. Conditions to obtain the ultrathin HSQ layer with a thickness of below 5 nm for tunneling were predicted and Ti/HSQ/Au diode devices with a parallel electrode arrangement were fabricated by using the conditions. The typical current-voltage characteristics of fabricated diodes exhibited that the asymmetry was about 1.8 at 3.0 V. It was demonstrated that the dynamic zero bias resistance of the diodes was as low as about 8 MΩ. Based on Simmons model, the estimated oxide-equivalent thickness of HSQ in the device was about 1.7 nm, which was in good agreement with the prediction. The good figures of merit of the fabricated diodes imply that the spin-coated ultrathin HSQ is very suitable for this application.

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Section: Introductionmentioning

confidence: 99%

Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer

Akahane¹,

Ishii²,

Yanagisawa³

et al. 2023

Jpn. J. Appl. Phys.

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Progress of lead-free perovskite and its resistance switching performance

Zeng¹,

Tan²,

Tang³

et al. 2021

Acta Phys. Sin.

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With the rapid development of the information age, the demand for information storage capacity and miniaturization of memory units has been being increased. However, the commonly used silicon-based flash memory has nearly approached to its physical limit. The resistive switching random access memory (ReRAM) has become one of the promising candidates for the next-generation non-volatile memory due to its simple structure, fast operation speed, excellent flexibility, and long endurance. Recently, we witnessed that the lead halide perovskites, as hot star materials, have been widely used in optoelectronic fields owning to their advantages of low cost, excellent photoelectric properties, and solution process ability. Moreover, the lead halide perovskite has been successfully used as the active layer in ReRAM device because of its tunable bandgap, long charge carrier diffusion length, fast ion migration, and high charge carrier mobility. Whereas the toxicity of lead in halide perovskite is a very horrible problem in lead halide perovskite-based ReRAM devices. The lead-free halide perovskite is considered to be the most promising material for perovskite-based ReRAM devices because it does not contain lead element. Most recently, a large number of scientists from different groups have begun to study lead-free perovskite-based ReRAM devices. For example, tin, bismuth, antimony, and copper-based halide perovskite materials have been utilized in ReRAM devices and exhibited excellent resistance switching (RS) performances. Here in this paper, the recent development of lead-free perovskite and its RS performance are reviewed, including lead-free halide perovskite materials, RS performances, and RS mechanisms of lead-free perovskite-based ReRAM. Finally, the key problems and development prospects of lead-free perovskite-based ReRAM are also presented, which provides a fundamental step towards developing the RS performance based on lead-free halide perovskites.

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Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices

Cited by 2 publications

References 18 publications

Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer

Parallel metal–insulator–metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer

Progress of lead-free perovskite and its resistance switching performance

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