Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Rajabi, Behzad; Vadizadeh, Mahdi

doi:10.1142/s0217979221501617

Cited by 1 publication

(3 citation statements)

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“…The fundamental basis of charge plasma is to utilize gates having different work functions to induce the source and channel region polarity [8]. Thus, junctionless TFETs have given a new outlook to the electronic industry by merging the advantages of TFET (steeper swing) and junctionless field effect transistor (JLFET) (high I ON ) [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…Many researchers have paid attention to analyze the performance characteristics of junctionless tunnel field effect transistor (JLTFET) by exploring the impact of control gate (CG) and polar gate (PG) work functions. However, the depletion of hole plasma by the work function of source electrode metal (SEM) at the interface of SEM and p + prompted source region (SEM/S) has not been given due importance [11][12][13][14][15][16][18][19][20]. The depletion of hole plasma gives rise to a Schottky interface at the SEM/S interface, which is implemented through the universal Schottky tunneling (UST) mechanism at the SEM/S interface.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we have given due attention to the UST at the SEM/S interface by selecting appropriate SEM work function. To take into account the Schottky tunneling at the SEM/S interface, an in-depth attention has been laid upon incorporating the UST model in our present work, which has been overlooked by many researchers before [8,9,11,16]. Figure 1 represents the grid sites near the Schottky contact, which signifies the localized tunneling generation rates of electrons.…”

Section: Introductionmentioning

confidence: 99%

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Influence of source electrode metal work function on polar gate prompted source hole plasma in arsenide/antimonide tunneling interfaced junctionless TFET

Sharma¹,

Chaujar²

2022

J. Micromech. Microeng.

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Numerous studies have explored the impact of control gate and polar gate on the retention of hole and electron charge plasma to induce the source and channel region polarity in junctionless tunnel field effect transistor. However, polar gate is not the only one responsible for the retention of hole plasma in the p+ prompted source but the hole plasma near the interface of source electrode metal and p+ prompted source (SEM/S) is influenced by the choice of source electrode metal work function too. This paper features a comprehensive investigation of the mutual significance of polar gate and source electrode metal work function on p+ prompted source to study key analog characteristics of arsenide/antimonide tunneling interfaced hetero-material JLTFET (HJLTFET), which is unexplored in the literature otherwise. We have considered three metals – W (4.55 eV), Mo (4.65 eV), and Pd (5.3 eV) as the source electrodes in HJLTFET. For source electrode metal work function lesser than p+ prompted source (W and Mo), the Schottky contact is formed by the depletion of hole plasma near source electrode metal and p+ prompted source interface. This results in the immediate current inhibition at source to channel interface caused by an undesired movement of electrons en route to the Schottky interface. The Schottky tunneling phenomenon is considered by implementing the Universal Schottky Tunneling model to study the underestimated drain current of HJLTFET. However, the Universal Schottky Tunneling model becomes inconsequential for source electrode metal work function higher than p+ prompted source (Pd) as hole plasma is preserved by the ohmic contact formation.

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