Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e., [Formula: see text] and [Formula: see text]), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III–V semiconductors in the source-channel region increases the ON-state current ([Formula: see text]) of the VHJL-TFET. Comparing the results of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e., [Formula: see text] and [Formula: see text]) and type III heterostructure (i.e., [Formula: see text] and [Formula: see text]) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current ([Formula: see text] to the body thickness ([Formula: see text] and doping concentration ([Formula: see text] is more than the sensitivity of the other main electrical parameters. The Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with a channel length of 20 nm, [Formula: see text] nm, and [Formula: see text] cm[Formula: see text] showed the [Formula: see text] mV/dec, [Formula: see text]/[Formula: see text], and [Formula: see text] mA/um. As a result, Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET can be a reasonable choice for digital applications.

GaXIn1-XAs/GaYIn1-YSb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e. X=0.8, Y=0.85), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III-V semiconductors in the source-channel region increases the ON-state current (ION (of the VHJL-TFET. Comparing the results of Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e. X=0.9, Y=0.1) and type III heterostructure (i.e. X=0.1, Y=0.4) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current (IOFF) to the body thickness (Tb) and doping concentration (ND) is more than the sensitivity of the other main electrical parameters. The Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET with a channel length of 20 nm, Tb=5 nm, and ND=1×1018cm-3 showed the SS=4.4mV/dec, ION/IOFF=4E14, and ION=8mA/um. As a result, Ga0.8In0.2As/Ga0.85In0.15Sb VHJL-TFET can be a reasonable choice for digital applications.