Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer

Kinder, R.; Vincze, Á.; Kuruc, M.; Srnänek, R.; Lojek, Bo; Sopko, B.; Chren, D.

doi:10.1016/j.mejo.2005.07.010

Cited by 1 publication

(2 citation statements)

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“…In a series of technology tests, the ion implantation, diffusion and annealing process cycles have been tested and the diffusion model has been fitted to the experimental data, tested and tuned. [8] The parameters of ion implantation have been tuned to form a shallow p-n junction. In the final structure design the guard ring will be created by diffusion from implant deposition, also.…”

Section: Ge-si Technologymentioning

confidence: 99%

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Single photon avalanche diode on Ge-Si, dreams, objectives and first results

et al. 2007

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We are presenting the design, technology development and tuning of the Single Photon Avalanche Diode fabricated on the germanium -silicon epitaxial layer. The ultimate goal is to develop a solid state photon detector with picosecond timing resolution and stability and an increased spectral sensitivity beyond 1100 nanometres in comparison to detectors based on silicon. The technology development steps on the Ge-Si epitaxial layer are presented together with the first results of the preparation of the shallow junction and its parameters. The diffusion and annealing models have been tuned for GeSi epitaxial layer and implantation. The resulting concentration profiles have been verified by two independent diagnostics methods. The first avalanche diode structures on the basis of the Ge0.4Si0.6, epitaxial layer on Silicon have been prepared and tested. The ability of the avalanche structure to operate in a Geiger mode has been demonstrated for the first time, the dark count rate has been measured. The serial resistance of the structure above its breakdown voltage has been measured. The detection sensitivity in the wavelength range of 500 to 1600 nanometres has been measured.

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Section: Ge-si Technologymentioning

confidence: 99%

“…The concentration profiles Ge, P and B have been measured and simulated [8]. Results are shown in Table I.…”

Section: Mesa Avalanche Diode Structure On Ge-simentioning

confidence: 99%