Investigation of the inhomogeneous barrier height of an Au/Bi ₄ Ti ₃ O ₁₂ /n-Si structure through Gaussian distribution of barrier height

Abstract

A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current—voltage (I–V) characteristics in a temperature range of 300 K–400 K. Obtained I–V data are evaluated by the thermionic emission (TE) theory. Zero-bias barrier height (ΦB0) and ideality factor (n) calculated from I–V characteristics, are found to be temperature-dependent such that ΦB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ΦB0 and linearity in ΦB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I–V characteristics are explained on the basis of Gaussian distribution of barrier height.

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

“…This discrepancy stems from the inhomogeneity of barrier height. 28) These inhomogeneities are explained by considering the Gaussian distribution of barrier heights that will follow later.…”

The effects of Bi4Ti3O12 interfacial ferroelectric layer on the dielectric properties of Au/n-Si structures

“…Cleaning of substrate and formation of metal contacts are conducted similar to the previous cases. 16,18 Also, deposition of Bi 4 Ti 3 O 12 layer was conducted through magnetron sputtering using the same experimental conditions in Ref. 16 such that the layer thickness of the thin film is arranged as about 10 nm which is measured by Veeco Dektak 6 M thickness profilometer.…”

“…16,18 Also, deposition of Bi 4 Ti 3 O 12 layer was conducted through magnetron sputtering using the same experimental conditions in Ref. 16 such that the layer thickness of the thin film is arranged as about 10 nm which is measured by Veeco Dektak 6 M thickness profilometer. Deposition conditions of perovskite structures such as Bi 4 Ti 3 O 12 are challenging, therefore formation of the structure may not occur as expected.…”

“…9,15 Generally, the interest in dielectric properties of this kind of ferroelectric layer comes from the fact that electrical and dielectric properties of diodes including ferroelectric material as interfacial layer are interesting and the usage of such layer enhances the device performance. In our previous study, 16 we investigated temperature dependence of current conduction behavior of Au/Bi 4 Ti 3 O 12 /n-Si MFS structures. It is important to note that, besides investigation of dielectric properties of ferroelectric materials in the form of ceramics, 17 investigation of dielectric properties of these materials in the form of diode structure is necessary as well since ferroelectric materials in FeRAMs and FeFETs are in interaction with metal and semiconductor surfaces.…”

Metal/Ferro-elektrik/Yarıiletken (Au/Bi4Ti3O12/n-Si) (MFS) Yapıların Hazırlanması ve Kompleks Dielektrik ile Elektrik Modülüsün 1 MHz için Sıcaklığa Bağlı İncelenmesi

“…Çünkü bu tür malzemeler; bir taraftan yarıiletken aygıtlardaki sızıntı akımı ve seri direnç (R s ) değerlerinde hatırı sayılır azaltırken diğer taraftan da kısa devre direncini (R sh ), engel yüksekliğini ve doğrultma oranını artırmaktadır. Baryum-titanyum-oksit (BTO) malzemesi de yüksek dielektrik sabiti değerine (küçük frekanslarda 200) sahip olup birçok yüzey durumunu pasife edebilme özeliğine sahiptir [1][2][3][4][5][6][7][8]. Öte yandan, kalıcı bellek uygulamalarına uyum sağlayan düşük zorlayıcı alan değeri, termal depolarizasyon problemlerini asgari düzeye indiren yüksek Curie sıcaklığı, yüksek dielektrik sabiti, yüksek kırılma dayanımı ve özgün anahtarlama davranışı yüzünden BTO bellek depolama kondansatörlerinde, optik belleklerde ve elektro-optik cihaz uygulamalarında oldukça fazla ilgi çekmiştir [5][6][7][8][9][10][11][12][13].…”