Investigation of the interaction between electrical discharges and low resistivity silicon substrates

Soldera, F.; Burdiles, G.; Schmid, U.; Seidel, H.; Mücklich, Frank

doi:10.1016/j.apsusc.2007.08.087

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…3 At present the low-resistivity ranges are typically 0.5 − 20 and 1 − 2 mΩ•cm for B-and P-doped bulk Si, respectively. 4 Low-resistivity bulk Si is usually obtained by the Czochralski growth of Si ingots with doping levels approaching the solubility limits of dopants.…”

Section: Introductionmentioning

confidence: 99%

Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

Luan

Koura

et al. 2014

AIP Advances

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Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤ ∼ 30 cm-2V-1s-1) mainly due to the scattering of carriers induced by structural defects such as pores.

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Section: Introductionmentioning

confidence: 99%